Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | POLB | P06746 | 1/20 | 0.34 |
| ▸ | NLRP3 | Q96P20 | 1/20 | 0.34 |
| ▸ | MEN1 | O00255 | 4/20 | 0.34 |
| ▸ | KMT2A | Q03164 | 4/20 | 0.34 |
| ▸ | HDAC3 | O15379 | 1/20 | 0.34 |
| ▸ | HDAC4 | P56524 | 1/20 | 0.34 |
| ▸ | HDAC1 | Q13547 | 1/20 | 0.34 |
| ▸ | HDAC7 | Q8WUI4 | 1/20 | 0.34 |
| ▸ | HDAC2 | Q92769 | 1/20 | 0.34 |
| ▸ | HDAC10 | Q969S8 | 1/20 | 0.34 |
| ▸ | HDAC11 | Q96DB2 | 1/20 | 0.34 |
| ▸ | HDAC8 | Q9BY41 | 1/20 | 0.34 |
| ▸ | HDAC6 | Q9UBN7 | 1/20 | 0.34 |
| ▸ | HDAC9 | Q9UKV0 | 1/20 | 0.34 |
| ▸ | HDAC5 | Q9UQL6 | 1/20 | 0.34 |
| ▸ | SOS1 | Q07889 | 1/20 | 0.33 |
| ▸ | TPMT | P51580 | 1/20 | 0.33 |
| ▸ | GFER | P55789 | 1/20 | 0.32 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.32 |
| ▸ | TSHR | P16473 | 1/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL19678533 | 0.97 | POLB (0.33) | POLBNLRP3MEN1KMT2AHDAC3 | |
| SCHEMBL19678517 | 0.93 | HDAC3 (0.33) | POLBNLRP3MEN1KMT2AHDAC3 | |
| SCHEMBL19678552 | 0.89 | KMT2A (0.38) | POLBNLRP3MEN1KMT2ASMN1; SMN2 | |
| SCHEMBL19683835 | 0.86 | HDAC3 (0.32) | POLBNLRP3MEN1KMT2AHDAC3 | |
| SCHEMBL19678544 | 0.85 | CDC25B (0.36) | POLBMEN1KMT2ASMN1; SMN2TSHR | |
| SCHEMBL19678542 | 0.84 | HDAC3 (0.35) | HDAC3HDAC4HDAC1HDAC7HDAC2 | |
| SCHEMBL19683837 | 0.82 | HDAC3 (0.36) | KMT2AHDAC3HDAC4HDAC1HDAC7 | |
| SCHEMBL22866012 | 0.81 | POLB (0.33) | POLBNLRP3HDAC3HDAC4HDAC1 | |
| SCHEMBL19678540 | 0.81 | — | — | |
| SCHEMBL19678549 | 0.81 | HDAC3 (0.42) | HDAC3HDAC4HDAC1HDAC7HDAC2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20230384676-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING PATTERN, POLYMER, AND COMPOUND | JSR CORPORATION (JP) | 2023-11-30 | — | — | US | disclosed |
| US-20230384676-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING PATTERN, POLYMER, AND COMPOUND | JSR CORPORATION (JP) | 2023-11-30 | — | — | US | disclosed |
| US-11774853-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-10-03 | — | — | US | disclosed |
| US-11774853-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-10-03 | — | — | US | disclosed |
| US-20230273519-A1 | RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD | JSR CORPORATION (JP) | 2023-08-31 | — | — | US | disclosed |
| US-20230273519-A1 | RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD | JSR CORPORATION (JP) | 2023-08-31 | — | — | US | disclosed |
| US-20230161255-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-05-25 | — | — | US | disclosed |
| US-20230161255-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-05-25 | — | — | US | disclosed |
| US-20220299875-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, AND METHOD FOR FORMING PATTERN | JSR CORPORATION (JP) | 2022-09-22 | — | — | US | disclosed |
| US-20220026803-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2022-01-27 | — | — | US | disclosed |
| US-11204553-B2 | Chemically amplified resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2021-12-21 | — | — | US | disclosed |
| US-20210188770-A1 | ONIUM SALT COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2021-06-24 | — | — | US | disclosed |
| US-10809617-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2020-10-20 | — | — | US | disclosed |
| US-20200241418-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2020-07-30 | — | — | US | disclosed |
| US-20200192222-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2020-06-18 | — | — | US | disclosed |
| US-20200050104-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2020-02-13 | — | — | US | disclosed |
| US-20190155155-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2019-05-23 | — | — | US | disclosed |
| US-10295904-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2019-05-21 | — | — | US | disclosed |
| US-20170351177-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-12-07 | — | — | US | disclosed |
| US-20170351177-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-12-07 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20210188770-A1 | ONIUM SALT COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | SLC6A5, LIFR, SLC6A9 | POLB 263/4885NLRP3 2557/4885MEN1 3280/4885 |
| US-10809617-B2 | Resist composition and patterning process | INSR, EWSR1, INSRR | POLB 440/4885NLRP3 3141/4885MEN1 1782/4885 |
| US-20190155155-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | INSR, EWSR1, INSRR | POLB 440/4885NLRP3 3141/4885MEN1 1782/4885 |
| US-20230384676-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING PATTERN, POLYMER, AND COMPOUND | RER1, RFT1, RAD51 | POLB 1280/4885NLRP3 838/4885MEN1 2125/4885 |
| US-20170351177-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | INSR, EWSR1, INSRR | POLB 440/4885NLRP3 3141/4885MEN1 1782/4885 |
| US-10295904-B2 | Resist composition and patterning process | INSR, EWSR1, INSRR | POLB 440/4885NLRP3 3141/4885MEN1 1782/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.