SCHEMBL19683952

SCHEMBL19683952

O=C(CC(F)(F)F)Oc1c(I)cc(I)cc1C(=O)O

nearest known ligand 0.36

Predicted protein targets (top 9)

geneUniProtsupporting neighboursconfidence
MAOB P27338 1/20 0.36
POLB P06746 1/20 0.35
NLRP3 Q96P20 1/20 0.35
KDM4E B2RXH2 2/20 0.33
ALDH1A1 P00352 2/20 0.33
HPGD P15428 2/20 0.33
HSD17B10 Q99714 2/20 0.33
USP2 O75604 1/20 0.33
CYP2C19 P33261 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL19678546 0.81 MAOB (0.40) MAOBPOLBNLRP3HSD17B10
SCHEMBL19678532 0.80 MAOB (0.39) MAOBPOLBNLRP3KDM4EALDH1A1
SCHEMBL19678534 0.80 POLB (0.40) MAOBPOLBNLRP3KDM4EHSD17B10
SCHEMBL25527385 0.80 MAOB (0.39) MAOBPOLBNLRP3
SCHEMBL19678548 0.79 MAOB (0.38) MAOBPOLBNLRP3KDM4E
SCHEMBL19683836 0.78 MAOB (0.37) MAOBPOLBNLRP3KDM4EALDH1A1
SCHEMBL25527337 0.78 MAOB (0.37) MAOBPOLBNLRP3KDM4E
SCHEMBL26343100 0.77 POLB (0.32) POLBNLRP3
SCHEMBL19678550 0.77 MAOB (0.36) MAOBPOLBNLRP3KDM4E
SCHEMBL19683953 0.76 MAOB (0.41) MAOBPOLBNLRP3HSD17B10

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 15 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2024127977-A1 RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, COMPOUND, AND ACID DIFFUSION CONTROL AGENT 東京応化工業株式会社 2024-06-20 WO disclosed
US-20230384676-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING PATTERN, POLYMER, AND COMPOUND JSR CORPORATION (JP) 2023-11-30 US disclosed
US-11774853-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-10-03 US disclosed
US-20230273519-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD JSR CORPORATION (JP) 2023-08-31 US disclosed
US-20230161255-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-25 US disclosed
US-20220299875-A1 RADIATION-SENSITIVE RESIN COMPOSITION, AND METHOD FOR FORMING PATTERN JSR CORPORATION (JP) 2022-09-22 US disclosed
US-20220026803-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-01-27 US disclosed
US-11204553-B2 Chemically amplified resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2021-12-21 US disclosed
US-10809617-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-10-20 US disclosed
US-20200241418-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-07-30 US disclosed
US-20200192222-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-06-18 US disclosed
US-20200050104-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-02-13 US disclosed
US-20190155155-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-05-23 US disclosed
US-10295904-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-05-21 US disclosed
US-20170351177-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-12-07 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-10809617-B2 Resist composition and patterning process INSR, EWSR1, INSRR MAOB 2476/4885POLB 440/4885NLRP3 3141/4885
US-20190155155-A1 RESIST COMPOSITION AND PATTERNING PROCESS INSR, EWSR1, INSRR MAOB 2476/4885POLB 440/4885NLRP3 3141/4885
US-20230384676-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING PATTERN, POLYMER, AND COMPOUND RER1, RFT1, RAD51 MAOB 3559/4885POLB 1280/4885NLRP3 838/4885
US-20170351177-A1 RESIST COMPOSITION AND PATTERNING PROCESS INSR, EWSR1, INSRR MAOB 2476/4885POLB 440/4885NLRP3 3141/4885
US-10295904-B2 Resist composition and patterning process INSR, EWSR1, INSRR MAOB 2476/4885POLB 440/4885NLRP3 3141/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.