SCHEMBL1995939

SCHEMBL1995939

CC(=Cc1ccc2cc3ccccc3cc2c1)C(=O)O

nearest known ligand 0.62

Predicted protein targets (top 8)

geneUniProtsupporting neighboursconfidence
AKR1C3 P42330 2/20 0.61
DHODH Q02127 1/20 0.49
RELA Q04206 1/20 0.43
PTPN1 P18031 1/20 0.41
APEX1 P27695 2/20 0.41
KDM4E B2RXH2 1/20 0.41
ALDH1A1 P00352 1/20 0.41
L3MBTL1 Q9Y468 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL122093 0.95 AKR1C3 (0.63) AKR1C3DHODHRELAPTPN1KDM4E
SCHEMBL29966982 0.95 AKR1C3 (0.63) AKR1C3DHODHRELAPTPN1KDM4E
SCHEMBL51774 0.95 AKR1C3 (0.63) AKR1C3DHODHRELAPTPN1KDM4E
Hydrochloric Acid SCHEMBL27571578 0.93 AKR1C3 (0.61) AKR1C3DHODHRELAPTPN1KDM4E
Hydrochloric Acid SCHEMBL6780341 0.93 AKR1C3 (0.61) AKR1C3DHODHRELAPTPN1KDM4E
SCHEMBL8746638 0.91 AKR1C3 (0.61) AKR1C3DHODH
SCHEMBL8746625 0.89 AKR1C3 (0.59) AKR1C3DHODHAPEX1
SCHEMBL17310565 0.85 AKR1C3 (0.56) AKR1C3DHODHKDM4EALDH1A1
SCHEMBL625698 0.85 ESR1 (0.53) AKR1C3DHODHRELAPTPN1
SCHEMBL625699 0.82 AKR1C3 (0.49) AKR1C3DHODHPTPN1KDM4EALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 28 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9594303-B2 Resist pattern-forming method and photoresist composition JSR CORPORATION (JP) 2017-03-14 US disclosed
US-9500950-B2 Fluorine-containing polymer, purification method, and radiation-sensitive resin composition JSR CORPORATION (JP) 2016-11-22 US disclosed
US-9335630-B2 Pattern-forming method, and radiation-sensitive composition JSR CORPORATION (JP) 2016-05-10 US disclosed
US-9298090-B2 2016-03-29 US disclosed
US-20160062237-A1 FLUORINE-CONTAINING POLYMER, PURIFICATION METHOD, AND RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2016-03-03 US disclosed
US-9229323-B2 Pattern-forming method JSR CORPORATION (JP) 2016-01-05 US disclosed
US-9213236-B2 Fluorine-containing polymer, purification method, and radiation-sensitive resin composition JSR CORPORATION (JP) 2015-12-15 US disclosed
US-20150353751-A1 INKJET INK COMPOSITION, INKJET RECORDING METHOD, PRINTED MATERIAL, AND PROCESS FOR PRODUCING MOLDED PRINTED MATERIAL FUJIFILM CORPORATION (JP) 2015-12-10 US disclosed
US-9170488-B2 Resist pattern-forming method, and radiation-sensitive resin composition JSR CORPORATION (JP) 2015-10-27 US disclosed
US-9164387-B2 Pattern-forming method, and radiation-sensitive resin composition JSR CORPORATION (JP) 2015-10-20 US disclosed
US-20140162190-A1 FLUORINE-CONTAINING POLYMER, PURIFICATION METHOD, AND RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2014-06-12 US disclosed
US-20130337385-A1 NEGATIVE PATTERN-FORMING METHOD AND PHOTORESIST COMPOSITION JSR CORPORATION (JP) 2013-12-19 US disclosed
US-20130230803-A1 RESIST PATTERN-FORMING METHOD, AND RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2013-09-05 US disclosed
US-20130224661-A1 PATTERN-FORMING METHOD, AND RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2013-08-29 US disclosed
US-20130224666-A1 RESIST PATTERN-FORMING METHOD, AND RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2013-08-29 US disclosed
US-20120258402-A1 PHOTORESIST COMPOSITION, RESIST-PATTERN FORMING METHOD, POLYMER, AND COMPOUND JSR CORPORATION (JP) 2012-10-11 US disclosed
US-20120171612-A1 RADIATION-SENSITIVE RESIN COMPOSITION, RESIST PATTERN FORMATION METHOD, AND POLYMER JSR CORPORATION (JP) 2012-07-05 US disclosed
US-20110151378-A1 RADIATION-SENSITIVE RESIN COMPOSITION FOR LIQUID IMMERSION LITHOGRAPHY, POLYMER, AND RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2011-06-23 US disclosed
US-7291361-B2 Image forming process, image-recorded article, liquid composition and ink-jet recording apparatus CANON KABUSHIKI KAISHA (JP) 2007-11-06 US disclosed
US-20050007436-A1 Image forming process, image-recorded article, liquid composition and ink-jet recording apparatus CANON KABUSHIKI KAISHA (JP) 2005-01-13 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20120258402-A1 PHOTORESIST COMPOSITION, RESIST-PATTERN FORMING METHOD, POLYMER, AND COMPOUND FRG1, NPY4R, RER1 AKR1C3 465/4885DHODH 2941/4885RELA 4155/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.