⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL15141786 | 0.97 | — | — | |
| SCHEMBL6162852 | 0.97 | — | — | |
| SCHEMBL55575 | 0.97 | — | — | |
| Hydrochloric Acid SCHEMBL6440538 | 0.94 | ALDH1A1 (0.42) | — | |
| Hydrochloric Acid SCHEMBL6438367 | 0.94 | ALDH1A1 (0.42) | — | |
| SCHEMBL5535014 | 0.94 | — | — | |
| SCHEMBL8820052 | 0.94 | — | — | |
| SCHEMBL16667044 | 0.94 | — | — | |
| Bromide SCHEMBL18420390 | 0.94 | — | — | |
| Hexane SCHEMBL10406565 | 0.94 | DNM1 (0.48) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 26 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-7960296-B2 | Crystalline semiconductor film, method of manufacturing the same, and semiconductor device | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) | 2011-06-14 | — | — | US | disclosed |
| US-7837792-B2 | Method for manufacturing semiconductor device | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) | 2010-11-23 | — | — | US | disclosed |
| US-20090253251-A1 | CRYSTALLINE SEMICONDUCTOR FILM, METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) | 2009-10-08 | — | — | US | disclosed |
| US-7452791-B2 | Crystalline semiconductor film, method of manufacturing the same, and semiconductor device | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) | 2008-11-18 | — | — | US | disclosed |
| CN-1320598-C | Manufacturing method of semiconductor device | SEMICONDUCTOR ENERGY LAB (JP) | 2007-06-06 | — | — | CN | disclosed |
| CN-1244161-C | Method for manufacturing semiconductor device | SEMICONDUCTOR ENERGY LAB (JP) | 2006-03-01 | — | — | CN | disclosed |
| US-20060024925-A1 | Crystalline semiconductor film, method of manufacturing the same, and semiconductor device | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) | 2006-02-02 | — | — | US | disclosed |
| US-6987036-B2 | Method for forming crystalline semiconductor film and apparatus for forming the same | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) | 2006-01-17 | — | — | US | disclosed |
| US-6951802-B2 | Crystalline semiconductor film, method of manufacturing the same, and semiconductor device | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) | 2005-10-04 | — | — | US | disclosed |
| CN-1619771-A | Manufacturing method of semiconductor device | SEMICONDUCTOR ENERGY LAB (JP) | 2005-05-25 | — | — | CN | disclosed |
| US-20030032267-A1 | Method for forming crystalline semiconductor film and apparatus for forming the same | SEMICONDUCTOR ENERGY LABORATOY CO., LTD. (JP) | 2003-02-13 | — | — | US | disclosed |
| CN-1396664-A | Method for manufacturing semiconductor device | SEMICONDUCTOR ENERGY LAB (JP) | 2003-02-12 | — | — | CN | disclosed |
| CN-1097298-C | Method of making crystal silicon semiconductor and thin film transistor | SEMICONDUCTOR ENERGY LAB (JP) | 2002-12-25 | — | — | CN | disclosed |
| CN-1088255-C | Method for manufacturing semiconductor device | SEMICONDUCTOR ENERGY LAB (JP) | 2002-07-24 | — | — | CN | disclosed |
| CN-1291785-A | Manufacturing method of semiconductor device | SEMICONDUCTOR ENERGY LAB (JP) | 2001-04-18 | — | — | CN | disclosed |
| CN-1058583-C | Method for manufacturing semiconductor | SEMICONDUCTOR ENERG LAB CO LTD (JP) | 2000-11-15 | — | — | CN | disclosed |
| CN-1264180-A | Semiconductor device and method for manufacturing the same | SEMICONDUCTOR ENERGY LAB (JP) | 2000-08-23 | — | — | CN | disclosed |
| CN-1131342-A | Method of making crystal silicon semiconductor and thin film transistor | SEMICONDUCTOR ENERGY LAB (JP) | 1996-09-18 | — | — | CN | disclosed |
| CN-1123463-A | Method for manufacturing semiconductor device | SEMICONDUCTOR ENERGY LAB (JP) | 1996-05-29 | — | — | CN | disclosed |
| CN-1098556-A | Semiconductor and method for manufacturing the same | SEMICONDUCTOR ENERGY LAB (JP) | 1995-02-08 | — | — | CN | disclosed |