SCHEMBL20044908

SCHEMBL20044908

Cc1cc(C)c(Cc2ccc(O)cc2)cc1Cc1ccc(O)cc1

nearest known ligand 0.61

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ESR1 P03372 5/20 0.54
ESR2 Q92731 5/20 0.54
KEAP1 Q14145 1/20 0.50
MEN1 O00255 1/20 0.44
MAPT P10636 1/20 0.44
KMT2A Q03164 1/20 0.44
THRA P10827 1/20 0.42
THRB P10828 1/20 0.42
ALOX5 P09917 1/20 0.42
IDH1 O75874 1/20 0.42
TMEM97 Q5BJF2 1/20 0.42
SIGMAR1 Q99720 1/20 0.42
CYP2D6 P10635 1/20 0.41
CYP2C9 P11712 1/20 0.41
CYP2C19 P33261 1/20 0.41
HIF1A Q16665 1/20 0.41
HSD17B10 Q99714 1/20 0.41
LDHA P00338 1/20 0.41
LDHB P07195 1/20 0.41
RXRA P19793 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL22647746 0.98 ESR1 (0.52) ESR1ESR2KEAP1MEN1MAPT
SCHEMBL20137003 0.94 ESR1 (0.52) ESR1ESR2KEAP1MEN1MAPT
SCHEMBL14564525 0.90 KEAP1 (0.50) ESR1ESR2KEAP1MEN1MAPT
SCHEMBL4058622 0.88 KEAP1 (0.52) ESR1ESR2KEAP1MEN1MAPT
SCHEMBL28158802 0.86 KEAP1 (0.50) ESR1ESR2KEAP1MEN1MAPT
SCHEMBL11200939 0.85 ESR2 (0.52) ESR1ESR2KEAP1MEN1MAPT
SCHEMBL7566966 0.82 ESR1 (0.48) ESR1ESR2KEAP1MEN1MAPT
SCHEMBL8066762 0.81 ESR1 (0.52) ESR1ESR2KEAP1MEN1MAPT
SCHEMBL15468220 0.79 ESR1 (0.50) ESR1ESR2KEAP1MEN1MAPT
SCHEMBL29131801 0.79 KEAP1 (0.57) ESR1ESR2KEAP1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20200354501-A1 COMPOSITION FOR FILM FORMATION FOR LITHOGRAPHY, FILM FOR LITHOGRAPHY, METHOD FOR FORMING RESIST PATTERN, AND METHOD FOR FORMING CIRCUIT PATTERN MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2020-11-12 US disclosed
US-20180101097-A1 MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, COMPOSITION FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY AND PATTERN FORMING METHOD MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2018-04-12 US disclosed
US-20180101097-A1 MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, COMPOSITION FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY AND PATTERN FORMING METHOD MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2018-04-12 US disclosed