SCHEMBL20143094

SCHEMBL20143094

O=C(O)c1c(C2C3CC4CC(C3)CC2C4)cc(C2C3CC4CC(C3)CC2C4)cc1C1C2CC3CC(C2)CC1C3

nearest known ligand 0.36

Predicted protein targets (top 5)

geneUniProtsupporting neighboursconfidence
SCN9A Q15858 3/20 0.36
HSD11B1 P28845 3/20 0.33
SCN5A Q14524 1/20 0.33
HSD17B10 Q99714 1/20 0.31
L3MBTL1 Q9Y468 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17323556 0.83 HSD11B1 (0.30) HSD11B1
SCHEMBL19249590 0.80 SCN9A (0.40) SCN9AHSD11B1SCN5A
SCHEMBL25634613 0.76 SLC6A3 (0.33) SCN9ASCN5A
SCHEMBL2758399 0.74 SCN9A (0.38) SCN9ASCN5A
SCHEMBL5833733 0.73 POLB (0.38) SCN9AHSD17B10
SCHEMBL27199191 0.73 CNR1 (0.37) SCN9A
SCHEMBL17323569 0.71 KMT2A (0.45) SCN9ASCN5AHSD17B10
SCHEMBL22321085 0.69 MEN1 (0.41) SCN9A
SCHEMBL23040780 0.69 CYP2C9 (0.36) HSD11B1
SCHEMBL5834427 0.68 SCN9A (0.42) SCN9AHSD11B1SCN5AHSD17B10L3MBTL1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230367214-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-16 US disclosed
US-20230367213-A1 MASK BLANK, RESIST PATTERN FORMING PROCESS AND CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-16 US disclosed
US-20230194986-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-06-22 US disclosed
US-9969829-B2 Polymer compound, negative resist composition, laminate, patterning process, and compound SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-05-15 US disclosed