Methane

Methane

SCHEMBL20512282

C.O=C1c2cccc3cccc(c23)C(=O)N1O

nearest known ligand 0.96

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Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ERCC1 P07992 2/20 0.96
FEN1 P39748 2/20 0.96
ERCC4 Q92889 2/20 0.96
ALDH1A1 P00352 9/20 0.60
KDM4E B2RXH2 6/20 0.60
HPGD P15428 4/20 0.60
KMT2A Q03164 3/20 0.60
HSD17B10 Q99714 3/20 0.60
MEN1 O00255 2/20 0.60
HEXA P06865 3/20 0.56
HEXB P07686 3/20 0.56
CYP1B1 Q16678 1/20 0.55
MAPT P10636 3/20 0.55
CYP1A2 P05177 2/20 0.55
POLB P06746 2/20 0.55
AKR1B1 P15121 1/20 0.55
ALOX15 P16050 1/20 0.55
TSHR P16473 1/20 0.55
ALOX12 P18054 1/20 0.55
TDP1 Q9NUW8 1/20 0.55

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL132760 0.98 ERCC1 (1.00) ERCC1FEN1ERCC4ALDH1A1KDM4E
SCHEMBL29410043 0.98 ERCC1 (1.00) ERCC1FEN1ERCC4ALDH1A1KDM4E
SCHEMBL27984890 0.96 ERCC1 (0.96) ERCC1FEN1ERCC4ALDH1A1KDM4E
SCHEMBL4888025 0.96 ERCC1 (0.96) ERCC1FEN1ERCC4ALDH1A1KDM4E
SCHEMBL43565 0.96 ERCC1 (0.96) ERCC1FEN1ERCC4ALDH1A1KDM4E
SCHEMBL65320 0.87 ERCC1 (0.79) ERCC1FEN1ERCC4ALDH1A1KDM4E
Trifluoromethanesulfonic Acid SCHEMBL51719 0.82 ERCC1 (0.71) ERCC1FEN1ERCC4ALDH1A1KDM4E
SCHEMBL7706718 0.81 ERCC1 (0.70) ERCC1FEN1ERCC4ALDH1A1KDM4E
SCHEMBL7706742 0.81 ERCC1 (0.70) ERCC1FEN1ERCC4ALDH1A1KDM4E
SCHEMBL7703367 0.81 ERCC1 (0.70) ERCC1FEN1ERCC4ALDH1A1KDM4E

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-3382454-B1 RESIST UNDERLAYER FILM COMPOSITION, PATTERNING PROCESS, AND METHOD FOR FORMING RESIST UNDERLAYER FILM SHINETSU CHEMICAL CO (JP) 2019-07-24 EP disclosed
EP-3382454-A1 RESIST UNDERLAYER FILM COMPOSITION, PATTERNING PROCESS, AND METHOD FOR FORMING RESIST UNDERLAYER FILM Shin-Etsu Chemical Co., Ltd. (JP) 2018-10-03 EP disclosed
CN-1273869-C Composition having refractive index sensitively changealbe by radiation and method for forming refractive index pattern JSR CORP (JP) 2006-09-06 CN disclosed
CN-1388919-A Composition having refractive index sensitively changealbe by radiation and method for forming refractive index pattern JSR CORP (JP) 2003-01-01 CN disclosed