SCHEMBL65320

SCHEMBL65320

CS(=O)(=O)O.O=C1c2cccc3cccc(c23)C(=O)N1O

nearest known ligand 0.79

Known targets — ChEMBL curated mechanism

ABL1ADRA1AADRA1BADRA1DADRA2AADRA2BADRA2CADRB2AGTR1BCL2BCL2A1BCL2L1BCL2L10BCL2L2BCRBRAFCHRM1CHRNA10CHRNA9DRD1DRD2DRD3DRD4DRD5EGFRF2FLT1FLT4GCKGHSRGNRHRGRIN1GRIN2AGRIN2BGRIN2CGRIN2DGRIN3AGRIN3BHTR1AHTR1BHTR1DHTR2AHTR2CHTR3AIDH2KDRKITMAOBMCL1MTTPPP4HBPDGFRBPIK3CAPIK3CBPIK3CDPIK3CGPIK3R1PIK3R2PIK3R3PIK3R5PIKFYVEROCK1ROCK2SLC18A2SLC6A2SLC6A3SLC6A4TACR1TUBA1ATUBA1BTUBA1CTUBA3CTUBA3ETUBA4ATUBBTUBB1TUBB2ATUBB2BTUBB3TUBB4ATUBB4BTUBB6TUBB8gyrAgyrBparCparEpol

The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MCL1 known ✓ Q07820 1/20 0.50
ERCC1 P07992 2/20 0.79
FEN1 P39748 2/20 0.79
ERCC4 Q92889 2/20 0.79
ALDH1A1 P00352 10/20 0.56
KDM4E B2RXH2 8/20 0.56
HPGD P15428 5/20 0.56
KMT2A Q03164 5/20 0.56
MEN1 O00255 4/20 0.56
HSD17B10 Q99714 3/20 0.56
CYP1B1 Q16678 1/20 0.51
CES2 O00748 1/20 0.50
BCHE P06276 1/20 0.50
CES1 P23141 1/20 0.50
HEXA P06865 2/20 0.49
HEXB P07686 2/20 0.49
MAPT P10636 4/20 0.47
LMNA P02545 2/20 0.47
POLB P06746 2/20 0.47
HTT P42858 2/20 0.47

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL29410043 0.89 ERCC1 (1.00) ERCC1FEN1ERCC4ALDH1A1KDM4E
SCHEMBL132760 0.89 ERCC1 (1.00) ERCC1FEN1ERCC4ALDH1A1KDM4E
Methane SCHEMBL20512282 0.87 ERCC1 (0.96) ERCC1FEN1ERCC4ALDH1A1KDM4E
SCHEMBL43565 0.87 ERCC1 (0.96) ERCC1FEN1ERCC4ALDH1A1KDM4E
SCHEMBL4888025 0.87 ERCC1 (0.96) ERCC1FEN1ERCC4ALDH1A1KDM4E
SCHEMBL27984890 0.87 ERCC1 (0.96) ERCC1FEN1ERCC4ALDH1A1KDM4E
Trifluoromethanesulfonic Acid SCHEMBL51719 0.85 ERCC1 (0.71) ERCC1FEN1ERCC4ALDH1A1KDM4E
SCHEMBL6761575 0.83 ERCC1 (0.69) ERCC1FEN1ERCC4ALDH1A1KDM4E
SCHEMBL66140 0.83 ERCC1 (0.50) ERCC1FEN1ERCC4ALDH1A1KDM4E
SCHEMBL1051383 0.80 ERCC1 (0.58) ERCC1FEN1ERCC4ALDH1A1KDM4E

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 383 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-112094232-B Synthesis method of N-hydroxynaphthalimide mesylate 河北凯力昂生物科技有限公司 2022-04-08 CN claimed
CN-112094232-A Synthesis method of N-hydroxynaphthalimide mesylate 河北凯力昂生物科技有限公司 2020-12-18 CN claimed
EP-2384457-B1 COATING COMPOSITIONS MERCK PATENT GMBH (DE) 2022-07-06 EP disclosed
CN-108693713-B Resist underlayer film material, pattern formation method, and resist underlayer film formation method 信越化学工业株式会社 2022-06-03 CN disclosed
CN-112094232-B Synthesis method of N-hydroxynaphthalimide mesylate 河北凯力昂生物科技有限公司 2022-04-08 CN disclosed
CN-112094232-B Synthesis method of N-hydroxynaphthalimide mesylate 河北凯力昂生物科技有限公司 2022-04-08 CN disclosed
CN-112094232-B Synthesis method of N-hydroxynaphthalimide mesylate 河北凯力昂生物科技有限公司 2022-04-08 CN disclosed
CN-106103396-B Compound, resin, material for forming underlayer film for lithography, pattern formation method, and method for purifying compound or resin 三菱瓦斯化学株式会社 2021-11-30 CN disclosed
CN-108693705-B Resist underlayer film material, pattern formation method, and resist underlayer film formation method 信越化学工业株式会社 2021-07-13 CN disclosed
CN-107848983-B Compound, resin, material for forming underlayer film for lithography, resist pattern, method for forming circuit pattern, and method for purifying resist pattern 三菱瓦斯化学株式会社 2021-07-09 CN disclosed
CN-113039177-A Material for forming film for lithography, composition for forming film for lithography, underlayer film for lithography, and pattern formation method 三菱瓦斯化学株式会社 2021-06-25 CN disclosed
US-6284429-B1 FOR FORMULATING PHOTORESISTS HAVING SENSITIVITY, RESOLUTION, ETCHING RESISTANCE SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-09-04 US disclosed
US-6280898-B1 PHOTORESISTS PATTERNS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-08-28 US disclosed
EP-1096318-A1 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-05-02 EP disclosed
EP-1096317-A1 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-05-02 EP disclosed
EP-1085377-A1 Resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-03-21 EP disclosed
EP-1053985-A1 Resist compositions and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2000-11-22 EP disclosed
US-6147249-A ESTER COMPOUND CAPABLE OF FORMING ACID-DECOMPOSABLE POLYMER WHICH CAN BE BLENDED AS BASE RESIN TO FORMULATE RESIST COMPOSITION HAVING HIGHER SENSITIVITY, RESOLUTION AND ETCHING RESISTANCE THAN CONVENTIONAL RESIST COMPOSITIONS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2000-11-14 US disclosed
EP-1031879-A1 Novel ester compounds, polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2000-08-30 EP disclosed
EP-1004568-A2 Novel ester compounds, polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2000-05-31 EP disclosed