SCHEMBL20533600

SCHEMBL20533600

O=C(c1cccc(O)c1)c1cc(O)c(O)c(O)c1

nearest known ligand 1.00 ✓ in ChEMBL — recovers established targets

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
FASN P49327 1/20 1.00
DYRK1A Q13627 2/20 0.59
CLK1 P49759 1/20 0.59
DYRK1B Q9Y463 1/20 0.59
HSD17B1 P14061 5/20 0.57
HSD17B2 P37059 5/20 0.57
CA12 O43570 1/20 0.55
CA1 P00915 1/20 0.55
CA2 P00918 1/20 0.55
CA6 P23280 1/20 0.55
CA9 Q16790 1/20 0.55
STS P08842 1/20 0.54
PARP1 P09874 1/20 0.53
KDM4E B2RXH2 2/20 0.50
EGLN2 Q96KS0 1/20 0.50
HDAC1 Q13547 1/20 0.48
ALDH1A1 P00352 1/20 0.48
ATM Q13315 1/20 0.48
TDP1 Q9NUW8 1/20 0.48
L3MBTL1 Q9Y468 1/20 0.48

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL29699163 0.87 FASN (0.76) FASNDYRK1ACLK1DYRK1BHSD17B1
SCHEMBL809540 0.87 FASN (0.76) FASNDYRK1ACLK1DYRK1BHSD17B1
SCHEMBL8861197 0.85 FASN (0.74) FASNDYRK1ACLK1DYRK1BHSD17B1
SCHEMBL7717186 0.84 FASN (0.72) FASNDYRK1ACLK1DYRK1BHSD17B1
SCHEMBL144795 0.81 ATM (0.74) FASNDYRK1ACLK1DYRK1BHSD17B1
SCHEMBL1738859 0.81 FASN (0.68) FASNCA12CA1CA2CA6
SCHEMBL21935597 0.81 FASN (0.68) FASNDYRK1ACLK1DYRK1BHSD17B1
SCHEMBL352369 0.80 KDM4E (0.65) FASNCA12CA1CA2CA6
SCHEMBL9131523 0.79 FASN (0.66) FASNDYRK1ACLK1DYRK1BHSD17B1
SCHEMBL8535254 0.79 FASN (0.66) FASNDYRK1ACLK1DYRK1BHSD17B1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-101355056-B Method for manufacturing thin film transistor substrate and photosensitive composition used in the substrate SAMSUNG DISPLAY CO LTD 2014-02-26 CN claimed
CN-108732868-B Positive resist film laminate and pattern forming method 信越化学工业株式会社 2022-12-13 CN disclosed
US-10719015-B2 Positive resist film laminate and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-07-21 US disclosed
EP-3392708-B1 POSITIVE RESIST FILM LAMINATE AND PATTERN FORMING PROCESS SHINETSU CHEMICAL CO (JP) 2020-03-18 EP disclosed
EP-3392708-A1 POSITIVE RESIST FILM LAMINATE AND PATTERN FORMING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2018-10-24 EP disclosed
US-20180299774-A1 POSITIVE RESIST FILM LAMINATE AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-10-18 US disclosed