⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL15213 | 0.87 | — | — | |
| SCHEMBL562096 | 0.75 | — | — | |
| SCHEMBL1378714 | 0.75 | — | — | |
| SCHEMBL15856023 | 0.75 | — | — | |
| SCHEMBL23039391 | 0.75 | — | — | |
| Ammonia Solution, Strong SCHEMBL25368540 | 0.75 | — | — | |
| SCHEMBL4812214 | 0.75 | — | — | |
| SCHEMBL36654 | 0.75 | — | — | |
| SCHEMBL20768711 | 0.75 | — | — | |
| SCHEMBL19513938 | 0.75 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 23 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-105895694-A | STACKED GATE-ALL-AROUND FINFET AND METHOD FORMING THE SAME | 台湾积体电路制造股份有限公司 | 2016-08-24 | — | — | CN | claimed |
| US-7968454-B2 | Method of forming pattern structure | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2011-06-28 | — | — | US | claimed |
| US-20100184288-A1 | Method of forming pattern structure | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2010-07-22 | — | — | US | claimed |
| CN-119993824-A | Method for selectively and remotely removing germanium oxide in interface layer of hafnium oxide-silicon germanium gate stack | 浙江大学 | 2025-05-13 | — | — | CN | disclosed |
| EP-4468397-A3 | ELECTRODES FOR METAL-ION BATTERIES | Nexeon Limited (GB) | 2025-04-30 | — | — | EP | disclosed |
| CN-119069591-A | Semiconductor structure and manufacturing method thereof | 无锡晶湛半导体有限公司 | 2024-12-03 | — | — | CN | disclosed |
| EP-4468397-A2 | ELECTRODES FOR METAL-ION BATTERIES | Nexeon Limited (GB) | 2024-11-27 | — | — | EP | disclosed |
| EP-4167312-A3 | ELECTRODES FOR METAL-ION BATTERIES | Nexeon Limited (GB) | 2023-05-03 | — | — | EP | disclosed |
| EP-4167312-A2 | ELECTRODES FOR METAL-ION BATTERIES | Nexeon Limited (GB) | 2023-04-19 | — | — | EP | disclosed |
| US-11127945-B2 | Electrodes for metal-ion batteries | NEXEON LIMITED (GB) | 2021-09-21 | — | — | US | disclosed |
| CN-112309867-A | Fin thinning by feedback control | 台湾积体电路制造股份有限公司 | 2021-02-02 | — | — | CN | disclosed |
| WO-2017216558-A1 | ELECTRODES FOR METAL-ION BATTERIES | NEXEON LIMITED (GB) | 2017-12-21 | — | — | WO | disclosed |
| CN-104299909-B | Stress in heat adjustment semiconductor device | 台湾积体电路制造股份有限公司 | 2017-04-05 | — | — | CN | disclosed |
| CN-104299909-B | Stress in heat adjustment semiconductor device | 台湾积体电路制造股份有限公司 | 2017-04-05 | — | — | CN | disclosed |
| CN-106469756-A | Semiconductor structure and manufacturing method thereof | 台湾积体电路制造股份有限公司 | 2017-03-01 | — | — | CN | disclosed |
| CN-105895694-A | STACKED GATE-ALL-AROUND FINFET AND METHOD FORMING THE SAME | 台湾积体电路制造股份有限公司 | 2016-08-24 | — | — | CN | disclosed |
| US-7968454-B2 | Method of forming pattern structure | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2011-06-28 | — | — | US | disclosed |
| US-20100184288-A1 | Method of forming pattern structure | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2010-07-22 | — | — | US | disclosed |
| US-5616515-A | Silicon oxide germanium resonant tunneling | TEXAS INSTRUMENTS INCORPORATED (US) | 1997-04-01 | — | — | US | disclosed |
| US-5466949-A | Silicon oxide germanium resonant tunneling | TEXAS INSTRUMENTS INCORPORATED (US) | 1995-11-14 | — | — | US | disclosed |