SCHEMBL2064936

SCHEMBL2064936

O=C(OC1CCCCC1)C1CC2CCC1C2

nearest known ligand 0.43

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
POLB P06746 1/20 0.43
EPHX1 P07099 4/20 0.39
MEN1 O00255 2/20 0.37
KMT2A Q03164 2/20 0.37
NPC1 O15118 1/20 0.37
RAB9A P51151 1/20 0.37
L3MBTL1 Q9Y468 1/20 0.37
HSD11B1 P28845 1/20 0.36
ATM Q13315 1/20 0.36
FABP7 O15540 1/20 0.36
FABP5 Q01469 1/20 0.36
HPGD P15428 1/20 0.35
KCNQ3 O43525 1/20 0.35
KCNQ2 O43526 1/20 0.35
KCNQ4 P56696 1/20 0.35
KCNQ5 Q9NR82 1/20 0.35
CYP2C19 P33261 1/20 0.34
HTT P42858 1/20 0.34
GAA P10253 1/20 0.34
THRB P10828 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12228749 0.98 POLB (0.44) POLBEPHX1MEN1KMT2ANPC1
SCHEMBL32689262 0.91 POLB (0.47) POLBMEN1KMT2ANPC1RAB9A
SCHEMBL1297428 0.80 EPHX1 (0.48) EPHX1FABP7FABP5CYP2C19HTT
SCHEMBL2035380 0.80 EPHX1 (0.48) EPHX1FABP7FABP5CYP2C19HTT
SCHEMBL12629239 0.79 POLB (0.41) POLBEPHX1MEN1KMT2ANPC1
SCHEMBL7593658 0.79 POLB (0.50) POLBMEN1KMT2ANPC1RAB9A
SCHEMBL12228753 0.78 ATM (0.53) POLBMEN1KMT2ANPC1RAB9A
SCHEMBL9908419 0.77 POLB (0.39) POLBMEN1KMT2ANPC1RAB9A
SCHEMBL2515949 0.77 POLB (0.52) POLBMEN1KMT2ANPC1RAB9A
SCHEMBL7647666 0.77 POLB (0.52) POLBMEN1KMT2ANPC1RAB9A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8524439-B2 Silsesquioxane resin systems with base additives bearing electron-attracting functionalities DOW CORNING CORPORATION (US) 2013-09-03 US claimed
US-8148043-B2 Silsesquioxane resin systems with base additives bearing electron-attracting functionalities DOW CORNING CORPORATION (US) 2012-04-03 US claimed
US-8043788-B2 Alkali soluble resin; immersion lithography SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-10-25 US disclosed
US-8043788-B2 Alkali soluble resin; immersion lithography SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-10-25 US disclosed
US-7598016-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-10-06 US disclosed
US-7598016-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-10-06 US disclosed
US-7514204-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-04-07 US disclosed
US-7514204-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-04-07 US disclosed
US-20090011365-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-01-08 US disclosed
US-20090011365-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-01-08 US disclosed
US-20080241736-A1 Immersion lithography; copolymer containing ammonium salt of carboxylic acid and fluorine monomer SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-10-02 US disclosed
US-20080241736-A1 Immersion lithography; copolymer containing ammonium salt of carboxylic acid and fluorine monomer SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-10-02 US disclosed
US-20080096131-A1 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-04-24 US disclosed
US-20080096131-A1 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-04-24 US disclosed