Predicted protein targets (top 9)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | KDM4E | B2RXH2 | 3/20 | 0.41 |
| ▸ | LMNA | P02545 | 1/20 | 0.41 |
| ▸ | EPHX2 | P34913 | 4/20 | 0.35 |
| ▸ | SLC22A6 | Q4U2R8 | 1/20 | 0.32 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.32 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.32 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.31 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.31 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL32689092 | 0.84 | KDM4E (0.40) | KDM4ELMNAEPHX2ALDH1A1TDP1 | |
| SCHEMBL4743391 | 0.82 | KDM4E (0.37) | KDM4ELMNAEPHX2ALDH1A1TDP1 | |
| SCHEMBL4666821 | 0.77 | KDM4E (0.33) | KDM4ELMNAEPHX2ALDH1A1TDP1 | |
| SCHEMBL10939675 | 0.77 | EPHX2 (0.35) | KDM4ELMNAEPHX2TDP1 | |
| SCHEMBL2426083 | 0.77 | CYP2D6 (0.35) | KDM4ELMNAEPHX2ALDH1A1 | |
| SCHEMBL13370548 | 0.76 | KDM4E (0.36) | KDM4ELMNAEPHX2ALDH1A1TDP1 | |
| SCHEMBL11732491 | 0.74 | KDM4E (0.32) | KDM4ELMNAEPHX2ALDH1A1TDP1 | |
| SCHEMBL10976261 | 0.73 | KDM4E (0.38) | KDM4ELMNAALDH1A1KMT2ATDP1 | |
| SCHEMBL5604335 | 0.73 | KDM4E (0.34) | KDM4ELMNAALDH1A1TDP1 | |
| SCHEMBL11604002 | 0.73 | KDM4E (0.38) | KDM4ELMNAEPHX2ALDH1A1TDP1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 32 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-116088269-A | 193nm wet photoresist additive and preparation method and application thereof | 上海芯刻微材料技术有限责任公司 | 2023-05-09 | — | — | CN | claimed |
| CN-116082609-B | 193Nm wet photoresist additive and preparation method and application thereof | 上海芯刻微材料技术有限责任公司 | 2025-05-30 | — | — | CN | disclosed |
| CN-116144014-B | 193Nm dry photoresist additive and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2025-02-14 | — | — | CN | disclosed |
| CN-116144016-B | 193Nm dry photoresist additive and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2025-02-14 | — | — | CN | disclosed |
| CN-116144015-B | 193Nm dry photoresist additive and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2024-11-19 | — | — | CN | disclosed |
| CN-115960341-B | ArF immersion type additive for photoresist and photoresist containing ArF immersion type additive | 上海芯刻微材料技术有限责任公司 | 2024-09-06 | — | — | CN | disclosed |
| CN-113820919-B | Application of multi-onium salt type photoacid generator for ArF light source dry lithography | 上海新阳半导体材料股份有限公司 | 2024-02-02 | — | — | CN | disclosed |
| CN-113820918-B | Photoacid generator for immersion ArF lithography and photoresist composition | 上海芯刻微材料技术有限责任公司 | 2023-08-25 | — | — | CN | disclosed |
| CN-113801048-B | Preparation method of photo-acid generator for immersion ArF lithography | 上海芯刻微材料技术有限责任公司 | 2023-08-11 | — | — | CN | disclosed |
| CN-113698330-B | Preparation method of 193nm immersion type photoacid generator for lithography | 上海芯刻微材料技术有限责任公司 | 2023-07-04 | — | — | CN | disclosed |
| CN-101712737-A | Polymer for resist and resist composition manufactured by using the same | KOREA KUMHO PETROCHEM CO LTD | 2010-05-26 | — | — | CN | disclosed |
| US-20090226848-A1 | Method of manufacturing light receiving device | SUMITOMO BAKELITE CO., LTD. (JP) | 2009-09-10 | — | — | US | disclosed |
| US-20090208872-A1 | Sulphonium Salt Initiators | BASF SE (DE) | 2009-08-20 | — | — | US | disclosed |
| EP-2026385-A1 | METHOD FOR MANUFACTURING LIGHT RECEIVING APPARATUS | Sumitomo Bakelite Company, Ltd. (JP) | 2009-02-18 | — | — | EP | disclosed |
| EP-1167349-B1 | Chemical amplifying type positive resist composition | SUMITOMO CHEMICAL CO (JP) | 2004-12-01 | — | — | EP | disclosed |
| US-6548220-B2 | Containing acid generator | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2003-04-15 | — | — | US | disclosed |
| US-20020015913-A1 | Chemical amplifying type positive resist composition and sulfonium salt | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2002-02-07 | — | — | US | disclosed |
| EP-1167349-A1 | Chemical amplifying type positive resist composition and sulfonium salt | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2002-01-02 | — | — | EP | disclosed |
| US-20010036591-A1 | Iodonium salts as latent acid donors | IGM GROUP B.V. (NL) | 2001-11-01 | — | — | US | disclosed |
| US-6306555-B1 | RADIATION-SENSITIVE COMPOSITION COMPRISING CATIONICALLY OR ACID-CATALYTICALLY POLYMERISABLE OR CROSSLINKABLE COMPOUND OR COMPOUND THAT INCREASES ITS SOLUBILITY IN DEVELOPER UNDER ACTION OF ACID, AND AT LEAST ONE DIARYLIODONIUM SALT | CIBA SPECIALTY CHEMICALS CORP. | 2001-10-23 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20090208872-A1 | Sulphonium Salt Initiators | OR10J3, OXSR1, ARSA | KDM4E 3536/4885LMNA 2184/4885EPHX2 2392/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.