Predicted protein targets (top 10)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CYP2D6 | P10635 | 1/20 | 0.35 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.34 |
| ▸ | LMNA | P02545 | 1/20 | 0.34 |
| ▸ | HDAC3 | O15379 | 1/20 | 0.34 |
| ▸ | HDAC1 | Q13547 | 1/20 | 0.34 |
| ▸ | HDAC2 | Q92769 | 1/20 | 0.34 |
| ▸ | HDAC8 | Q9BY41 | 1/20 | 0.34 |
| ▸ | HDAC6 | Q9UBN7 | 1/20 | 0.34 |
| ▸ | EPHX2 | P34913 | 2/20 | 0.33 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL27982287 | 0.84 | EPHX2 (0.34) | EPHX2 | |
| SCHEMBL15063320 | 0.81 | ALDH1A1 (0.31) | EPHX2ALDH1A1 | |
| SCHEMBL6250343 | 0.81 | ALDH1A1 (0.31) | EPHX2ALDH1A1 | |
| SCHEMBL15063319 | 0.79 | — | — | |
| SCHEMBL12938373 | 0.79 | — | — | |
| SCHEMBL15063337 | 0.79 | KDM4E (0.30) | KDM4ELMNA | |
| SCHEMBL32688787 | 0.79 | ALDH1A1 (0.42) | CYP2D6KDM4ELMNAHDAC3HDAC1 | |
| SCHEMBL32689092 | 0.79 | KDM4E (0.40) | KDM4ELMNAEPHX2ALDH1A1 | |
| SCHEMBL2070938 | 0.77 | KDM4E (0.41) | KDM4ELMNAEPHX2ALDH1A1 | |
| SCHEMBL12938381 | 0.76 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 69 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20250013149-A1 | ADDITIVE FOR 193 NM DRY PHOTORESIST AND PREPARATION METHOD FOR AND APPLICATION OF ADDITIVE | CHINA ADVANCED LITHOGRAPHIC MATERIAL TECHNOLOGY CO. LTD. (CN) | 2025-01-09 | — | — | US | claimed |
| CN-116088269-A | 193nm wet photoresist additive and preparation method and application thereof | 上海芯刻微材料技术有限责任公司 | 2023-05-09 | — | — | CN | claimed |
| CN-115963691-A | Additive for ArF immersion photoresist and photoresist containing additive | 上海芯刻微材料技术有限责任公司 | 2023-04-14 | — | — | CN | claimed |
| CN-116082609-B | 193Nm wet photoresist additive and preparation method and application thereof | 上海芯刻微材料技术有限责任公司 | 2025-05-30 | — | — | CN | disclosed |
| CN-116144016-B | 193Nm dry photoresist additive and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2025-02-14 | — | — | CN | disclosed |
| CN-116144014-B | 193Nm dry photoresist additive and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2025-02-14 | — | — | CN | disclosed |
| US-20250013149-A1 | ADDITIVE FOR 193 NM DRY PHOTORESIST AND PREPARATION METHOD FOR AND APPLICATION OF ADDITIVE | CHINA ADVANCED LITHOGRAPHIC MATERIAL TECHNOLOGY CO. LTD. (CN) | 2025-01-09 | — | — | US | disclosed |
| CN-116144015-B | 193Nm dry photoresist additive and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2024-11-19 | — | — | CN | disclosed |
| US-20240351979-A1 | POLYONIUM SALT PHOTOACID GENERATOR FOR ARF LIGHT SOURCE DRY LITHOGRAPHY, PREPARATION METHOD THEREFOR AND APPLICATION THEREOF | SHANGHAI SINYANG SEMICONDUCTOR MATERIALS CO., LTD. (CN) | 2024-10-24 | — | — | US | disclosed |
| CN-115960341-B | ArF immersion type additive for photoresist and photoresist containing ArF immersion type additive | 上海芯刻微材料技术有限责任公司 | 2024-09-06 | — | — | CN | disclosed |
| WO-2023092817-A1 | ADDITIVE FOR 193 NM DRY PHOTORESIST AND PREPARATION METHOD FOR AND APPLICATION OF ADDITIVE | 上海新阳半导体材料股份有限公司 | 2023-06-01 | — | — | WO | disclosed |
| US-6369143-B1 | COPOLYMER OF MALEIC ANHYDRIDE AND CARBOXYLIC ACID-GRAFTED NORBORNENE DERIVATIVES, PHOTOACID GENERATOR, AND SOLVENT; DRY ETCH RESISTANCE, BONDING STRENGTH, TRANSPARENCY | KOREA KUMHO PETROCHEMICAL CO., LTD. (KR) | 2002-04-09 | — | — | US | disclosed |
| US-6358666-B1 | PHOTORESISTS, ACID GENERATORS AND STYRENE POLYMERS | KOREA KUMHO PETROCHEMICAL CO., LTD. (KR) | 2002-03-19 | — | — | US | disclosed |
| US-20010041302-A1 | Chemically amplified resist composition containing low molecular weight additives | SK MATERIALS PERFORMANCE CO., LTD. (KR) | 2001-11-15 | — | — | US | disclosed |
| EP-1126320-A2 | Chemically amplified resist composition containing low molecular weight additives | Korea Kumho Petrochemical Co. Ltd. (KR) | 2001-08-22 | — | — | EP | disclosed |
| EP-1111466-A1 | The chemical amplified resist composition containing norbornane type low molecular additive | Korea Kumho Petrochemical Co. Ltd. (KR) | 2001-06-27 | — | — | EP | disclosed |
| US-6146810-A | REGULATING THE CONTENT AND KIND OF THE NORBORNENE DERIVATIVES IN THE MATRIX POLYMERS IN ADDITION TO BEING SUPERIOR IN ADHERENCE TO SUBSTRATE AND DRY ETCH RESISTANCE | KOREA KUMHO PETROCHEMICAL CO., LTD. (KR) | 2000-11-14 | — | — | US | disclosed |
| US-6063542-A | Polymer for positive photoresist and chemical amplification positive photoresist composition comprising the same | KOREA KUMHO PETROCHEMICAL CO., LTD. (KR) | 2000-05-16 | — | — | US | disclosed |
| EP-0994392-A2 | Polymer for radiation-sensitive resist and resist composition containing the same | Korea Kumho Petrochemical Co. Ltd. (KR) | 2000-04-19 | — | — | EP | disclosed |
| EP-0989462-A1 | Resist polymer and chemical amplified resist composition containing the same | Korea Kumho Petrochemical Co. Ltd. (KR) | 2000-03-29 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20240351979-A1 | POLYONIUM SALT PHOTOACID GENERATOR FOR ARF LIGHT SOURCE DRY LITHOGRAPHY, PREPARATION METHOD THEREFOR AND APPLICATION THEREOF | ARF5, ARF1, ARFGEF1 | CYP2D6 3954/4885KDM4E 4703/4885LMNA 2206/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.