SCHEMBL20897151

SCHEMBL20897151

NC(=O)C1C2C=CC(C2)C1C(=O)Nc1ccccc1O

nearest known ligand 0.56

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
POLB P06746 2/20 0.56
CASP6 P55212 1/20 0.56
CTDSP1 Q9GZU7 1/20 0.56
GAA P10253 5/20 0.47
TDP1 Q9NUW8 3/20 0.47
ALDH1A1 P00352 4/20 0.46
KDM4E B2RXH2 3/20 0.46
KDM1A O60341 1/20 0.44
EPHX2 P34913 1/20 0.42
KMT2A Q03164 3/20 0.41
MEN1 O00255 2/20 0.41
L3MBTL1 Q9Y468 1/20 0.41
MAPT P10636 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL20897168 0.89 POLB (0.50) POLBCASP6CTDSP1GAATDP1
SCHEMBL9013080 0.81 POLB (0.58) POLBCASP6CTDSP1GAATDP1
SCHEMBL20897153 0.77 POLB (0.57) POLBGAATDP1ALDH1A1KDM4E
SCHEMBL11851766 0.72 ALOX15 (0.66) POLBCASP6CTDSP1ALDH1A1KDM4E
SCHEMBL9073184 0.72 ALDH1A1 (0.41) POLBGAATDP1ALDH1A1KMT2A
SCHEMBL2549326 0.72 ALDH1A1 (0.41) POLBGAATDP1ALDH1A1KMT2A
SCHEMBL22654023 0.72 TSHR (0.42) POLBCASP6CTDSP1GAATDP1
SCHEMBL20969059 0.71 POLB (0.58) POLBGAATDP1ALDH1A1KDM4E
SCHEMBL15702582 0.71 POLB (0.71) POLBCASP6CTDSP1GAATDP1
SCHEMBL251917 0.71 KDM4E (0.44) POLBCASP6CTDSP1GAATDP1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240329525-A1 PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR MANUFACTURING CURED RELIEF PATTERN, AND SEMICONDUCTOR APPARATUS ASAHI KASEI KABUSHIKI KAISHA (JP) 2024-10-03 US disclosed
US-20240210827-A1 PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR MANUFACTURING CURED RELIEF PATTERN, AND SEMICONDUCTOR APPARATUS ASAHI KASEI KABUSHIKI KAISHA (JP) 2024-06-27 US disclosed
CN-113820920-B Photosensitive resin composition, method for producing cured relief pattern, and semiconductor device 旭化成株式会社 2023-07-04 CN disclosed
CN-113820920-A Photosensitive resin composition, method for producing cured relief pattern, and semiconductor device 旭化成株式会社 2021-12-21 CN disclosed
CN-107850844-B Photosensitive resin composition, method for producing cured relief pattern, and semiconductor device 旭化成株式会社 2021-09-07 CN disclosed
CN-107329367-B Photosensitive resin composition, method for producing cured relief pattern, semiconductor device, and display device 旭化成株式会社 2021-03-23 CN disclosed
US-20200409263-A1 PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR MANUFACTURING CURED RELIEF PATTERN, AND SEMICONDUCTOR APPARATUS ASAHI KASEI KABUSHIKI KAISHA (JP) 2020-12-31 US disclosed
US-10831101-B2 Photosensitive resin composition, method for manufacturing cured relief pattern, and semiconductor apparatus ASAHI KASEI KABUSHIKI KAISHA (JP) 2020-11-10 US disclosed
US-20190113845-A1 PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR MANUFACTURING CURED RELIEF PATTERN, AND SEMICONDUCTOR APPARATUS ASAHI KASEI KABUSHIKI KAISHA (JP) 2019-04-18 US disclosed