SCHEMBL2102108

SCHEMBL2102108

CCN(CC)c1c([SiH3])cccc1Cl

nearest known ligand 0.37

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
KDM4E B2RXH2 1/20 0.37
SMN1; SMN2 Q16637 3/20 0.36
ALDH1A1 P00352 2/20 0.36
LMNA P02545 1/20 0.36
S1PR1 P21453 4/20 0.34
CYP3A4 P08684 1/20 0.33
KMT2A Q03164 2/20 0.32
ITGB1 P05556 1/20 0.32
ITGA4 P13612 1/20 0.32
DOT1L Q8TEK3 1/20 0.32
CYP1A2 P05177 1/20 0.31
CYP2A6 P11509 1/20 0.31
CNR2 P34972 1/20 0.31
TP53 P04637 1/20 0.31
CRHR1 P34998 1/20 0.31
ESR1 P03372 2/20 0.31
MEN1 O00255 1/20 0.31
MAPT P10636 1/20 0.31
TDP1 Q9NUW8 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2100543 0.78 ALDH1A1 (0.34) ALDH1A1CYP3A4CRHR1MAPTTDP1
SCHEMBL2100321 0.77 DOT1L (0.38) SMN1; SMN2ALDH1A1LMNAKMT2ADOT1L
SCHEMBL2101363 0.76 S1PR1 (0.31) KDM4EALDH1A1S1PR1CNR2TDP1
SCHEMBL8966971 0.76 KDM4E (0.37) KDM4ESMN1; SMN2ALDH1A1LMNAS1PR1
SCHEMBL14860191 0.76 S1PR1 (0.34) KDM4ESMN1; SMN2ALDH1A1LMNAS1PR1
SCHEMBL2102669 0.73 CYP1A2 (0.33) SMN1; SMN2ALDH1A1LMNAS1PR1CYP3A4
SCHEMBL2102543 0.73 TP53 (0.36) SMN1; SMN2ALDH1A1LMNAS1PR1CYP3A4
SCHEMBL2268565 0.71
SCHEMBL2101682 0.71
SCHEMBL19111974 0.70 TAAR1 (0.38) KDM4ESMN1; SMN2LMNADOT1LCYP1A2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed