SCHEMBL2102669

SCHEMBL2102669

CCC([SiH3])c1cccc(Cl)c1N(CC)CC

nearest known ligand 0.33

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
CYP1A2 P05177 1/20 0.33
CYP3A4 P08684 1/20 0.33
CYP2D6 P10635 1/20 0.33
NFKB1 P19838 1/20 0.33
NISCH Q9Y2I1 1/20 0.33
PNMT P11086 1/20 0.33
ALDH1A1 P00352 2/20 0.33
LMNA P02545 2/20 0.33
GLA P06280 1/20 0.33
MC4R P32245 1/20 0.32
CFD P00746 1/20 0.32
AOC3 Q16853 1/20 0.32
ITGB1 P05556 1/20 0.32
ITGA4 P13612 1/20 0.32
S1PR1 P21453 2/20 0.31
SMN1; SMN2 Q16637 2/20 0.30
SLC6A2 P23975 1/20 0.30
SLC6A4 P31645 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2102663 0.85 NISCH (0.38) CYP1A2CYP3A4CYP2D6NFKB1NISCH
SCHEMBL2104387 0.81 ALDH1A1 (0.30) CYP3A4ALDH1A1
SCHEMBL2102355 0.77 PNMT (0.52) CYP1A2CYP3A4CYP2D6NFKB1NISCH
SCHEMBL2272069 0.76 NISCH (0.44) CYP1A2CYP3A4CYP2D6NFKB1NISCH
SCHEMBL2102108 0.73 KDM4E (0.37) CYP1A2CYP3A4ALDH1A1LMNAITGB1
SCHEMBL2271013 0.72 TSHR (0.34) LMNA
SCHEMBL2102181 0.71 CXCL8 (0.35) CYP1A2CYP3A4CYP2D6NFKB1NISCH
SCHEMBL2103218 0.70 CXCL8 (0.34) CYP1A2CYP3A4CYP2D6NFKB1NISCH
SCHEMBL14860191 0.69 S1PR1 (0.34) CYP1A2CYP3A4ALDH1A1LMNAITGB1
SCHEMBL8966971 0.69 KDM4E (0.37) CYP1A2CYP3A4ALDH1A1LMNAS1PR1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed