SCHEMBL2102111

SCHEMBL2102111

CN(C)[Si](c1ccccc1)(N(C)C)C(C)(C)C

nearest known ligand 0.36

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
KCNN4 O15554 1/20 0.36
AOC3 Q16853 1/20 0.35
ESR1 P03372 1/20 0.32
ESR2 Q92731 1/20 0.32
ALDH1A1 P00352 1/20 0.31
TSHR P16473 1/20 0.31
MAPK1 P28482 1/20 0.31
NR1H2 P55055 1/20 0.31
NR1H3 Q13133 1/20 0.31
MEN1 O00255 1/20 0.30
HTT P42858 1/20 0.30
KMT2A Q03164 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2101443 0.84 RIPK1 (0.30) AOC3
SCHEMBL2271603 0.76 KCNN4 (0.36) KCNN4AOC3ESR1ESR2ALDH1A1
SCHEMBL2103614 0.76 CYP2D6 (0.32) AOC3ALDH1A1TSHRMAPK1MEN1
SCHEMBL2101735 0.73 AOC3 (0.33) KCNN4AOC3ESR1ESR2
SCHEMBL7667669 0.70 ESR1 (0.34) ESR1ESR2ALDH1A1TSHRMAPK1
SCHEMBL3457789 0.70 AOC3 (0.38) KCNN4AOC3ESR1ESR2ALDH1A1
SCHEMBL29749402 0.69 ESR1 (0.37) KCNN4AOC3ESR1ESR2ALDH1A1
SCHEMBL3526796 0.69 ESR1 (0.37) KCNN4AOC3ESR1ESR2ALDH1A1
SCHEMBL2276954 0.69 ESR1 (0.37) KCNN4AOC3ESR1ESR2ALDH1A1
SCHEMBL765973 0.69 MEN1 (0.40) KCNN4AOC3ESR1ESR2ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed