⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL5858601 | 0.90 | FAAH (0.48) | — | |
| SCHEMBL5858596 | 0.90 | FAAH (0.48) | — | |
| SCHEMBL11383139 | 0.90 | FAAH (0.48) | — | |
| SCHEMBL5324088 | 0.83 | — | — | |
| SCHEMBL31028405 | 0.82 | — | — | |
| SCHEMBL8992283 | 0.78 | TSHR (0.41) | — | |
| SCHEMBL2099723 | 0.77 | TSHR (0.32) | — | |
| SCHEMBL2101110 | 0.77 | TSHR (0.32) | — | |
| SCHEMBL216757 | 0.76 | — | — | |
| SCHEMBL8992206 | 0.76 | TSHR (0.39) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2128897-B1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LTD (JP) | 2015-05-06 | — | — | EP | disclosed |
| US-8791221-B2 | Addition-curable metallosiloxane compound | DAICEL CORPORATION (JP) | 2014-07-29 | — | — | US | disclosed |
| US-8716209-B2 | Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device | FUJITSU LIMITED (JP) | 2014-05-06 | — | — | US | disclosed |
| EP-2650319-A1 | ADDITION-CURABLE METALLOSILOXANE COMPOUND | Daicel Corporation (JP) | 2013-10-16 | — | — | EP | disclosed |
| US-20130267653-A1 | ADDITION-CURABLE METALLOSILOXANE COMPOUND | DAICEL CORPORATION (JP) | 2013-10-10 | — | — | US | disclosed |
| US-8404584-B2 | Method of manufacturing semiconductor device | FUJITSU LIMITED (JP) | 2013-03-26 | — | — | US | disclosed |
| US-8164166-B2 | Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device | FUJITSU LIMITED (JP) | 2012-04-24 | — | — | US | disclosed |
| US-20110207319-A1 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2011-08-25 | — | — | US | disclosed |
| US-20100007031-A1 | AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2010-01-14 | — | — | US | disclosed |
| EP-2128897-A1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | Fujitsu Limited (JP) | 2009-12-02 | — | — | EP | disclosed |
| US-20090085170-A1 | INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2009-04-02 | — | — | US | disclosed |