SCHEMBL2102370

SCHEMBL2102370

CCN[Si](Cl)(c1ccccc1)C(C)C

nearest known ligand 0.37

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
SIGMAR1 Q99720 3/20 0.37
AOC3 Q16853 1/20 0.34
HTT P42858 3/20 0.33
LMNA P02545 2/20 0.33
ALDH1A1 P00352 2/20 0.33
TDP1 Q9NUW8 2/20 0.33
MITF O75030 1/20 0.33
USP2 O75604 1/20 0.33
POLB P06746 1/20 0.33
MAPT P10636 1/20 0.33
CHRM2 P08172 2/20 0.32
CHRM1 P11229 2/20 0.32
ADRA1A P35348 2/20 0.32
SLC6A3 Q01959 2/20 0.32
KCNH2 Q12809 2/20 0.32
CYP3A4 P08684 2/20 0.32
HTR1A P08908 1/20 0.32
ADRA2A P08913 1/20 0.32
ADORA3 P0DMS8 1/20 0.32
SMPD1 P17405 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2099899 0.85 SIGMAR1 (0.35) SIGMAR1AOC3HTTLMNAALDH1A1
SCHEMBL2269102 0.79 SIGMAR1 (0.39) SIGMAR1AOC3HTTALDH1A1TDP1
SCHEMBL2100673 0.79 TAAR1 (0.33) SIGMAR1AOC3LMNATDP1CHRM2
SCHEMBL2104720 0.75 SIGMAR1 (0.39) SIGMAR1AOC3HTTLMNAALDH1A1
SCHEMBL2103096 0.74 KCNN4 (0.41) SIGMAR1HTTLMNAALDH1A1TDP1
SCHEMBL2099500 0.74 KCNN4 (0.37) SIGMAR1AOC3HTTLMNAALDH1A1
SCHEMBL2100205 0.74 KCNN4 (0.37) SIGMAR1AOC3HTTLMNAALDH1A1
SCHEMBL2101254 0.73 TAAR1 (0.33) SIGMAR1AOC3HTTLMNAALDH1A1
SCHEMBL2100216 0.72 ESR1 (0.40) SIGMAR1HTTLMNAALDH1A1MAPT
SCHEMBL2100791 0.72 KCNN4 (0.36) HTTLMNAALDH1A1TDP1MITF

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed