SCHEMBL2104720

SCHEMBL2104720

CCN[Si](NCC)(c1ccccc1)C(C)C

nearest known ligand 0.39

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
SIGMAR1 Q99720 5/20 0.39
KCNN4 O15554 1/20 0.34
HTT P42858 1/20 0.34
TAAR1 Q96RJ0 6/20 0.33
SLC18A2 Q05940 1/20 0.33
MEN1 O00255 1/20 0.33
KMT2A Q03164 1/20 0.33
TDP1 Q9NUW8 1/20 0.33
AOC3 Q16853 1/20 0.32
TP53 P04637 1/20 0.32
KDM4E B2RXH2 1/20 0.31
ALDH1A1 P00352 1/20 0.31
GAA P10253 1/20 0.31
HPGD P15428 1/20 0.31
MAOA P21397 1/20 0.31
SLC6A2 P23975 1/20 0.31
SLC6A4 P31645 1/20 0.31
SLC6A3 Q01959 1/20 0.31
LMNA P02545 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2103827 0.83 SIGMAR1 (0.37) SIGMAR1KCNN4HTTTAAR1SLC18A2
SCHEMBL2269102 0.78 SIGMAR1 (0.39) SIGMAR1KCNN4HTTTAAR1SLC18A2
SCHEMBL2099888 0.77 TDP1 (0.36) SIGMAR1KCNN4TAAR1SLC18A2MEN1
SCHEMBL2102370 0.75 SIGMAR1 (0.37) SIGMAR1KCNN4HTTTAAR1SLC18A2
SCHEMBL2273250 0.75 ESR1 (0.38) SIGMAR1KCNN4HTTTP53KDM4E
SCHEMBL2268318 0.74 SIGMAR1 (0.36) SIGMAR1KCNN4HTTTAAR1SLC18A2
SCHEMBL2103024 0.74 SIGMAR1 (0.36) SIGMAR1KCNN4HTTTAAR1SLC18A2
SCHEMBL2102177 0.72 KCNN4 (0.39) SIGMAR1KCNN4HTTTP53KDM4E
SCHEMBL2268924 0.72 KCNN4 (0.39) SIGMAR1KCNN4HTTTP53KDM4E
SCHEMBL233708 0.72 KCNN4 (0.39) SIGMAR1KCNN4HTTTP53KDM4E

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed