⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL9789070 | 0.79 | — | — | |
| SCHEMBL2103636 | 0.73 | — | — | |
| SCHEMBL2099705 | 0.71 | — | — | |
| SCHEMBL2104196 | 0.71 | — | — | |
| SCHEMBL8594886 | 0.69 | — | — | |
| SCHEMBL2099946 | 0.69 | ALDH1A1 (0.33) | — | |
| SCHEMBL2100352 | 0.69 | — | — | |
| SCHEMBL2100421 | 0.69 | — | — | |
| SCHEMBL2100456 | 0.63 | — | — | |
| SCHEMBL2103442 | 0.63 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-114156526-A | High-voltage electrolyte for lithium battery | 浙江大学 | 2022-03-08 | — | — | CN | disclosed |
| US-8404584-B2 | Method of manufacturing semiconductor device | FUJITSU LIMITED (JP) | 2013-03-26 | — | — | US | disclosed |
| US-8164166-B2 | Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device | FUJITSU LIMITED (JP) | 2012-04-24 | — | — | US | disclosed |
| US-20110207319-A1 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2011-08-25 | — | — | US | disclosed |
| US-7767840-B2 | Organometallic compounds | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2010-08-03 | — | — | US | disclosed |
| US-20090156852-A1 | Organometallic compounds | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2009-06-18 | — | — | US | disclosed |
| US-20090085170-A1 | INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2009-04-02 | — | — | US | disclosed |
| EP-1464724-B1 | Organometallic germanium compounds suitable for use in vapor deposition processes | ROHM & HAAS ELECT MAT (US) | 2008-12-10 | — | — | EP | disclosed |
| EP-1990345-A1 | Organometallic germanium compounds suitable for use in vapor deposition processes | Rohm and Haas Electronic Materials LLC (US) | 2008-11-12 | — | — | EP | disclosed |
| US-7413776-B2 | Method of depositing a metal-containing film | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2008-08-19 | — | — | US | disclosed |
| US-20040194703-A1 | Organometallic compounds | ROHM AND HAAS ELECTRONIC MATERIALS, L.L.C. | 2004-10-07 | — | — | US | disclosed |
| EP-1464724-A2 | Organometallic compounds suitable for use in vapor deposition processes | Rohm and Haas Electronic Materials, L.L.C. (US) | 2004-10-06 | — | — | EP | disclosed |