SCHEMBL2102629

SCHEMBL2102629

CCCC[Si](C)(Cl)N(C)C

nearest known ligand 0.31

Predicted protein targets (top 4)

geneUniProtsupporting neighboursconfidence
DNM1 Q05193 1/20 0.31
TSHR P16473 2/20 0.30
TDP1 Q9NUW8 1/20 0.30
LMNA P02545 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2099643 0.83
SCHEMBL2102515 0.77
SCHEMBL2100359 0.76 DNM1 (0.32) DNM1TSHRTDP1LMNA
SCHEMBL2099946 0.76 ALDH1A1 (0.33) DNM1TSHRTDP1LMNA
SCHEMBL2100689 0.76 DNM1 (0.32) DNM1TSHRTDP1LMNA
SCHEMBL2102668 0.72 DNM1 (0.33) DNM1TSHRLMNA
SCHEMBL422241 0.72 DNM1 (0.33) DNM1TSHRLMNA
SCHEMBL2273385 0.72 DNM1 (0.33) DNM1TSHRLMNA
SCHEMBL2103552 0.72
SCHEMBL2104311 0.72

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed