SCHEMBL2102986

SCHEMBL2102986

CC[Si](c1ccccc1)(N(C)C)N(C)C

nearest known ligand 0.36

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 2/20 0.36
TSHR P16473 2/20 0.36
TP53 P04637 1/20 0.35
AOC3 Q16853 3/20 0.33
HTR2A P28223 3/20 0.33
HRH1 P35367 3/20 0.33
TAAR1 Q96RJ0 2/20 0.33
DRD3 P35462 2/20 0.32
ESR1 P03372 1/20 0.32
ESR2 Q92731 1/20 0.32
TDP1 Q9NUW8 1/20 0.32
MGLL Q99685 1/20 0.31
HPGD P15428 1/20 0.31
GFER P55789 1/20 0.31
GRM5 P41594 1/20 0.31
LMNA P02545 1/20 0.31
CYP1A2 P05177 1/20 0.31
CHRM2 P08172 1/20 0.31
CHRM4 P08173 1/20 0.31
CHRM5 P08912 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2102962 0.87 ALDH1A1 (0.31) ALDH1A1TSHRTP53HPGD
SCHEMBL2102725 0.82 ALDH1A1 (0.33) ALDH1A1TSHRTP53AOC3HTR2A
SCHEMBL16033350 0.81 KMT2A (0.53) ALDH1A1HPGDGFERHTT
SCHEMBL12802574 0.79 ALDH1A1 (0.34) ALDH1A1TSHRAOC3HTR2AHRH1
SCHEMBL2101242 0.79 ALDH1A1 (0.33) ALDH1A1TSHRTP53AOC3DRD3
SCHEMBL2103061 0.79 TDP1 (0.34) TSHRTDP1HPGDOPRM1HTT
SCHEMBL2104133 0.77 ALDH1A1 (0.33) ALDH1A1TSHRTP53AOC3HTR2A
SCHEMBL2272729 0.76 ALDH1A1 (0.36) ALDH1A1TSHRTP53AOC3HTR2A
SCHEMBL2101652 0.76
SCHEMBL2272101 0.74 ESR1 (0.35) ALDH1A1TSHRTP53AOC3HTR2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed