SCHEMBL2104133

SCHEMBL2104133

CC[Si](Cl)(c1ccccc1)N(C)C

nearest known ligand 0.33

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 2/20 0.33
TSHR P16473 1/20 0.33
TP53 P04637 1/20 0.32
TAAR1 Q96RJ0 2/20 0.31
HTR2A P28223 1/20 0.31
HRH1 P35367 1/20 0.31
AOC3 Q16853 1/20 0.31
HIF1A Q16665 1/20 0.31
ESR1 P03372 1/20 0.30
ESR2 Q92731 1/20 0.30
TDP1 Q9NUW8 1/20 0.30
LMNA P02545 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2102658 0.83 ALDH1A1 (0.31) ALDH1A1TSHRTP53
SCHEMBL2104189 0.81 TSHR (0.31) ALDH1A1TSHRTP53TAAR1AOC3
SCHEMBL2100894 0.80 NPC1 (0.34) ALDH1A1TSHRTDP1
SCHEMBL2102986 0.77 ALDH1A1 (0.36) ALDH1A1TSHRTP53TAAR1HTR2A
SCHEMBL2272729 0.73 ALDH1A1 (0.36) ALDH1A1TSHRTP53TAAR1HTR2A
SCHEMBL705504 0.72 TP53 (0.38) ALDH1A1TSHRTP53HIF1AESR1
SCHEMBL55438 0.72 ESR1 (0.34) ALDH1A1TSHRTP53TAAR1HTR2A
SCHEMBL703207 0.72 TP53 (0.38) ALDH1A1TSHRTP53ESR1ESR2
SCHEMBL2100521 0.72 ESR1 (0.34) ALDH1A1TSHRTP53TAAR1HTR2A
SCHEMBL2104633 0.72 ESR1 (0.34) ALDH1A1TSHRTP53TAAR1HTR2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed