SCHEMBL2102962

SCHEMBL2102962

CCN(CC)[Si](CC)(c1ccccc1)N(C)C

nearest known ligand 0.33

Predicted protein targets (top 9)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 4/20 0.31
TSHR P16473 3/20 0.31
MAPT P10636 2/20 0.31
CRHBP P24387 1/20 0.31
CRHR2 Q13324 1/20 0.31
NPSR1 Q6W5P4 1/20 0.31
HPGD P15428 2/20 0.31
GLA P06280 1/20 0.31
TP53 P04637 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2101242 0.90 ALDH1A1 (0.33) ALDH1A1TSHRMAPTCRHBPCRHR2
SCHEMBL2102986 0.87 ALDH1A1 (0.36) ALDH1A1TSHRHPGDTP53
SCHEMBL2101652 0.85
SCHEMBL2102250 0.82 TSHR (0.34) ALDH1A1TSHRMAPTCRHBPCRHR2
SCHEMBL12802418 0.79 ALDH1A1 (0.32) ALDH1A1TSHRMAPTHPGDGLA
SCHEMBL2104384 0.78 ALDH1A1 (0.32) ALDH1A1TSHRMAPTHPGDGLA
SCHEMBL11127633 0.77 TSHR (0.34) ALDH1A1TSHRGLATP53
SCHEMBL2101677 0.75 TSHR (0.33) ALDH1A1TSHRGLATP53
SCHEMBL2101178 0.75 TSHR (0.33) ALDH1A1TSHRGLATP53
SCHEMBL2102030 0.75 CHRM2 (0.35) ALDH1A1TSHRMAPTHPGDGLA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed