SCHEMBL2103062

SCHEMBL2103062

CCC(C)c1ccccc1[SiH](N(C)C)N(C)C

nearest known ligand 0.50

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
TSHR P16473 1/20 0.50
ATM Q13315 1/20 0.38
NISCH Q9Y2I1 1/20 0.35
KDM4E B2RXH2 2/20 0.35
L3MBTL1 Q9Y468 1/20 0.33
TRPA1 O75762 1/20 0.33
GABRA1 P14867 1/20 0.32
GABRB2 P47870 1/20 0.32
HTT P42858 2/20 0.32
MEN1 O00255 1/20 0.32
MAPT P10636 1/20 0.32
CYP2C9 P11712 1/20 0.32
KMT2A Q03164 1/20 0.32
RORC P51449 1/20 0.32
AOC3 Q16853 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2101585 0.84 TSHR (0.48) TSHRATMNISCHKDM4EL3MBTL1
SCHEMBL2101032 0.82 TSHR (0.47) TSHRATMNISCHKDM4EL3MBTL1
SCHEMBL2102459 0.77 TSHR (0.53) TSHRATMNISCHKDM4EL3MBTL1
SCHEMBL994607 0.75 TSHR (0.73) TSHRATMNISCHKDM4EL3MBTL1
SCHEMBL2099684 0.74 TSHR (0.50) TSHRATMNISCHKDM4EL3MBTL1
SCHEMBL4999824 0.74 TSHR (0.50) TSHRATMNISCHKDM4EL3MBTL1
SCHEMBL2102088 0.74 TSHR (0.46) TSHRATMNISCHKDM4EL3MBTL1
SCHEMBL4996332 0.73 TSHR (0.48) TSHRATMNISCHKDM4EL3MBTL1
SCHEMBL2103832 0.73 TSHR (0.48) TSHRATMNISCHKDM4EL3MBTL1
SCHEMBL2101258 0.71 TSHR (0.47) TSHRATMNISCHKDM4EL3MBTL1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed