SCHEMBL2102459

SCHEMBL2102459

CCC(C)c1ccccc1[SiH](Cl)Cl

nearest known ligand 0.53

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
TSHR P16473 1/20 0.53
KDM4E B2RXH2 2/20 0.35
L3MBTL1 Q9Y468 1/20 0.35
GABRA1 P14867 1/20 0.34
GABRB2 P47870 1/20 0.34
ATM Q13315 1/20 0.34
NISCH Q9Y2I1 1/20 0.34
HTT P42858 2/20 0.33
RORC P51449 1/20 0.33
PKM P14618 1/20 0.31
TRPA1 O75762 1/20 0.31
PPARA Q07869 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2101032 0.82 TSHR (0.47) TSHRKDM4EL3MBTL1GABRA1GABRB2
SCHEMBL2101258 0.82 TSHR (0.47) TSHRKDM4EL3MBTL1GABRA1GABRB2
SCHEMBL2102088 0.80 TSHR (0.46) TSHRKDM4EL3MBTL1ATMNISCH
SCHEMBL2099902 0.80 TSHR (0.46) TSHRKDM4EL3MBTL1ATMNISCH
SCHEMBL2099008 0.79 GABRA1 (0.44) TSHRL3MBTL1GABRA1GABRB2
SCHEMBL994607 0.78 TSHR (0.73) TSHRKDM4EL3MBTL1GABRA1GABRB2
SCHEMBL2099684 0.77 TSHR (0.50) TSHRKDM4EL3MBTL1GABRA1GABRB2
SCHEMBL2103062 0.77 TSHR (0.50) TSHRKDM4EL3MBTL1GABRA1GABRB2
SCHEMBL4999824 0.77 TSHR (0.50) TSHRKDM4EL3MBTL1GABRA1GABRB2
SCHEMBL4996332 0.76 TSHR (0.48) TSHRKDM4EL3MBTL1GABRA1GABRB2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed