Predicted protein targets (top 8)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.32 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.32 |
| ▸ | MEN1 | O00255 | 1/20 | 0.31 |
| ▸ | NPC1 | O15118 | 1/20 | 0.31 |
| ▸ | RAB9A | P51151 | 1/20 | 0.31 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.31 |
| ▸ | NOX1 | Q9Y5S8 | 1/20 | 0.31 |
| ▸ | KCNN4 | O15554 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2103215 | 0.90 | KDM4E (0.34) | KDM4EL3MBTL1MEN1NPC1RAB9A | |
| SCHEMBL2101901 | 0.88 | KCNN4 (0.34) | KDM4EL3MBTL1MEN1NPC1RAB9A | |
| SCHEMBL2101650 | 0.85 | KDM4E (0.32) | KDM4EL3MBTL1MEN1NPC1RAB9A | |
| SCHEMBL2102950 | 0.75 | ESR1 (0.33) | KDM4EL3MBTL1NPC1RAB9AKCNN4 | |
| SCHEMBL11127633 | 0.74 | TSHR (0.34) | — | |
| SCHEMBL2102030 | 0.72 | CHRM2 (0.35) | L3MBTL1NPC1 | |
| SCHEMBL2101654 | 0.72 | KCNN4 (0.34) | KDM4EL3MBTL1NPC1RAB9AKCNN4 | |
| SCHEMBL2101178 | 0.72 | TSHR (0.33) | MEN1KMT2A | |
| SCHEMBL2101677 | 0.72 | TSHR (0.33) | MEN1KMT2A | |
| SCHEMBL2103088 | 0.72 | KCNN4 (0.34) | KDM4ENPC1RAB9AKCNN4 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8404584-B2 | Method of manufacturing semiconductor device | FUJITSU LIMITED (JP) | 2013-03-26 | — | — | US | disclosed |
| US-8164166-B2 | Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device | FUJITSU LIMITED (JP) | 2012-04-24 | — | — | US | disclosed |
| US-20110207319-A1 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2011-08-25 | — | — | US | disclosed |
| US-20090085170-A1 | INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2009-04-02 | — | — | US | disclosed |