SCHEMBL2102950

SCHEMBL2102950

CCN[Si](NCC)(c1ccccc1)N(CC)CC

nearest known ligand 0.33

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ESR1 P03372 2/20 0.33
ESR2 Q92731 1/20 0.33
KCNN4 O15554 1/20 0.33
NR1I2 O75469 1/20 0.32
ALDH1A1 P00352 3/20 0.31
TSHR P16473 2/20 0.31
GLA P06280 1/20 0.31
TP53 P04637 1/20 0.31
L3MBTL1 Q9Y468 3/20 0.31
KDM4E B2RXH2 2/20 0.31
SIGMAR1 Q99720 1/20 0.31
CHRM2 P08172 1/20 0.31
HTR1A P08908 1/20 0.31
ADRA2A P08913 1/20 0.31
CHRM1 P11229 1/20 0.31
DRD1 P21728 1/20 0.31
SLC6A2 P23975 1/20 0.31
SLC6A4 P31645 1/20 0.31
ADRA1A P35348 1/20 0.31
OPRM1 P35372 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2102295 0.83 L3MBTL1 (0.32) NR1I2ALDH1A1TSHRGLATP53
SCHEMBL2101654 0.81 KCNN4 (0.34) ESR1ESR2KCNN4ALDH1A1TSHR
SCHEMBL2103215 0.79 KDM4E (0.34) KCNN4ALDH1A1TSHRGLATP53
SCHEMBL2103007 0.76 KCNN4 (0.31) KCNN4
SCHEMBL2103255 0.75 KDM4E (0.32) KCNN4L3MBTL1KDM4ENPC1RAB9A
SCHEMBL9979418 0.73 TP53 (0.36) ESR1ESR2NR1I2ALDH1A1TSHR
SCHEMBL2271289 0.73 TP53 (0.36) ESR1ESR2ALDH1A1TSHRGLA
SCHEMBL2100019 0.73 TP53 (0.36) ESR1ESR2NR1I2ALDH1A1TSHR
SCHEMBL2102622 0.73 KCNH2 (0.39) ESR1ESR2ALDH1A1TSHRGLA
SCHEMBL2101600 0.72 NR1I2 (0.36) ESR1ESR2NR1I2ALDH1A1TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed