SCHEMBL2103088

SCHEMBL2103088

CCN[Si](c1ccccc1)(c1ccccc1)N(C)C

nearest known ligand 0.34

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
KCNN4 O15554 1/20 0.34
ALDH1A1 P00352 3/20 0.33
TSHR P16473 1/20 0.33
TP53 P04637 1/20 0.32
SIGMAR1 Q99720 1/20 0.31
KDM4E B2RXH2 1/20 0.31
GAA P10253 1/20 0.31
HPGD P15428 1/20 0.31
HTR2A P28223 1/20 0.31
HRH1 P35367 1/20 0.31
AOC3 Q16853 1/20 0.31
TAAR1 Q96RJ0 1/20 0.31
HTT P42858 1/20 0.31
NPC1 O15118 1/20 0.31
RAB9A P51151 1/20 0.31
MAPT P10636 1/20 0.31
ATM Q13315 1/20 0.30
ESR1 P03372 1/20 0.30
ESR2 Q92731 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2101654 0.78 KCNN4 (0.34) KCNN4ALDH1A1TSHRTP53SIGMAR1
SCHEMBL2101901 0.78 KCNN4 (0.34) KCNN4ALDH1A1TSHRTP53SIGMAR1
SCHEMBL2270811 0.77 KCNN4 (0.38) KCNN4ALDH1A1TSHRTP53SIGMAR1
SCHEMBL2103257 0.75 KCNN4 (0.32) KCNN4ALDH1A1TSHRTP53HTT
SCHEMBL2103963 0.75 KCNN4 (0.32) KCNN4ALDH1A1TSHRTP53
SCHEMBL2103024 0.74 SIGMAR1 (0.36) KCNN4ALDH1A1TSHRSIGMAR1HTR2A
SCHEMBL2103255 0.72 KDM4E (0.32) KCNN4KDM4ENPC1RAB9A
SCHEMBL2100450 0.72 ALDH1A1 (0.32) KCNN4ALDH1A1KDM4EGAAHPGD
SCHEMBL2102166 0.72 KCNN4 (0.34) KCNN4AOC3TAAR1
SCHEMBL2102177 0.72 KCNN4 (0.39) KCNN4ALDH1A1TSHRTP53SIGMAR1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed