SCHEMBL2103215

SCHEMBL2103215

CCN[Si](c1ccccc1)(N(CC)CC)N(CC)CC

nearest known ligand 0.34

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KDM4E B2RXH2 2/20 0.34
L3MBTL1 Q9Y468 2/20 0.34
MEN1 O00255 2/20 0.33
KMT2A Q03164 2/20 0.33
NPC1 O15118 1/20 0.33
RAB9A P51151 1/20 0.33
NOX1 Q9Y5S8 1/20 0.33
KCNN4 O15554 1/20 0.33
ALDH1A1 P00352 3/20 0.31
TSHR P16473 2/20 0.31
GLA P06280 1/20 0.31
TP53 P04637 1/20 0.31
SIGMAR1 Q99720 1/20 0.31
CHRM2 P08172 1/20 0.31
HTR1A P08908 1/20 0.31
ADRA2A P08913 1/20 0.31
CHRM1 P11229 1/20 0.31
DRD1 P21728 1/20 0.31
SLC6A2 P23975 1/20 0.31
SLC6A4 P31645 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2103255 0.90 KDM4E (0.32) KDM4EL3MBTL1MEN1KMT2ANPC1
SCHEMBL2101901 0.81 KCNN4 (0.34) KDM4EL3MBTL1MEN1KMT2ANPC1
SCHEMBL2102950 0.79 ESR1 (0.33) KDM4EL3MBTL1NPC1RAB9AKCNN4
SCHEMBL2101650 0.79 KDM4E (0.32) KDM4EL3MBTL1MEN1KMT2ANPC1
SCHEMBL2103007 0.76 KCNN4 (0.31) KCNN4
SCHEMBL2271289 0.73 TP53 (0.36) KDM4EL3MBTL1ALDH1A1TSHRGLA
SCHEMBL2100019 0.73 TP53 (0.36) L3MBTL1ALDH1A1TSHRGLATP53
SCHEMBL2102622 0.73 KCNH2 (0.39) L3MBTL1NPC1ALDH1A1TSHRGLA
SCHEMBL9979418 0.73 TP53 (0.36) L3MBTL1ALDH1A1TSHRGLATP53
SCHEMBL10626373 0.71 ESR1 (0.37) L3MBTL1ALDH1A1TSHRGLATP53

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed