SCHEMBL2103685

SCHEMBL2103685

CCN(CC)CNC=C([SiH3])c1ccccc1

nearest known ligand 0.38

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 4/20 0.38
NPSR1 Q6W5P4 3/20 0.38
MAPT P10636 3/20 0.35
KDM4E B2RXH2 2/20 0.35
AGTR1 P30556 1/20 0.35
PKM P14618 1/20 0.35
ADRA2A P08913 4/20 0.33
KCNH2 Q12809 4/20 0.33
KMT2A Q03164 3/20 0.33
PGR P06401 2/20 0.33
ADRA2B P18089 2/20 0.33
HTR2A P28223 2/20 0.33
MEN1 O00255 2/20 0.33
HPGD P15428 1/20 0.33
HRH1 P35367 1/20 0.33
SMN1; SMN2 Q16637 1/20 0.33
ABCB1 P08183 2/20 0.33
BCHE P06276 1/20 0.33
TDP1 Q9NUW8 1/20 0.33
CHRM2 P08172 3/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2274705 0.80 ATM (0.36) ALDH1A1NPSR1MAPTKDM4EKMT2A
SCHEMBL2101109 0.75 ALDH1A1 (0.34) ALDH1A1NPSR1MAPTKDM4EPKM
SCHEMBL2270399 0.70 TSHR (0.39) ALDH1A1NPSR1MAPTKDM4EPKM
SCHEMBL2277485 0.69 ALDH1A1 (0.38) ALDH1A1NPSR1MAPTADRA2AKCNH2
SCHEMBL28110277 0.66 ATM (0.40) ALDH1A1NPSR1MAPTKDM4EKMT2A
SCHEMBL2102356 0.66
SCHEMBL8401904 0.65 CES2 (0.39) ALDH1A1MAPTPKMKMT2AMEN1
Dibenzoylmethane SCHEMBL16011488 0.63 MAPT (0.71) ALDH1A1NPSR1MAPTKDM4EAGTR1
Benzoyl Chloride SCHEMBL10933062 0.63 ALDH1A1 (0.49) ALDH1A1NPSR1MAPTKDM4EAGTR1
Benzophenone SCHEMBL8962994 0.62 ALDH1A1 (0.66) ALDH1A1NPSR1MAPTKDM4EAGTR1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed