⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2101889 | 0.79 | — | — | |
| SCHEMBL2101492 | 0.79 | — | — | |
| SCHEMBL2102438 | 0.75 | DNM1 (0.32) | — | |
| SCHEMBL17717611 | 0.75 | — | — | |
| SCHEMBL15309922 | 0.69 | — | — | |
| SCHEMBL2102119 | 0.69 | — | — | |
| SCHEMBL2103891 | 0.67 | — | — | |
| SCHEMBL972471 | 0.67 | — | — | |
| SCHEMBL510702 | 0.67 | — | — | |
| SCHEMBL18280184 | 0.65 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 245 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20250376758-A1 | SELECTIVE DEPOSITION OF METAL-CONTAINING MATERIAL | ASM IP HOLDING BV (NL) | 2025-12-11 | — | — | US | claimed |
| US-12421603-B2 | Composition for high temperature atomic layer deposition of high quality silicon oxide thin films | VERSUM MATERIALS US, LLC (US) | 2025-09-23 | — | — | US | claimed |
| CN-119900018-A | Composition for high temperature atomic layer deposition of high quality silicon oxide films | 弗萨姆材料美国有限责任公司 | 2025-04-29 | — | — | CN | claimed |
| EP-3414278-B1 | VAPOR-PHASE CURING CATALYSIS AND PASSIVATION OF SILOXANE RESINS IN LED APPLICATIONS | LUMILEDS LLC (US) | 2024-06-05 | — | — | EP | claimed |
| CN-117903344-A | Composite object system loaded with bis (dimethylamino) dialkylsilane compounds and preparation and application thereof | 中国石油化工股份有限公司 | 2024-04-19 | — | — | CN | claimed |
| US-11649547-B2 | Deposition of carbon doped silicon oxide | VERSUM MATERIALS US, LLC (US) | 2023-05-16 | — | — | US | claimed |
| CN-112481603-B | Liquid source storage device | 武汉新芯集成电路制造有限公司 | 2023-04-28 | — | — | CN | claimed |
| US-11629232-B2 | Vapor-phase curing catalysis and passivation of siloxane resins in LED applications | LUMILEDS LLC (US) | 2023-04-18 | — | — | US | claimed |
| US-11631580-B2 | Formulation for deposition of silicon doped hafnium oxide as ferroelectric materials | VERSUM MATERIALS US, LLC (US) | 2023-04-18 | — | — | US | claimed |
| CN-110573651-B | Formulations for depositing silicon doped hafnium oxide as ferroelectric material | 弗萨姆材料美国有限责任公司 | 2022-07-22 | — | — | CN | claimed |
| US-20130295779-A1 | HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF SILICON OXIDE THIN FILMS | VERSUM MATERIALS US, LLC | 2013-11-07 | — | — | US | claimed |
| EP-2650399-A2 | High temperature atomic layer deposition of silicon oxide thin films | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2013-10-16 | — | — | EP | claimed |
| US-20070135601-A1 | Initiator systems for polymerisable compositions | HUNTSMAN ADVANCED MATERIALS AMERICAS INC. (US) | 2007-06-14 | — | — | US | claimed |
| JP-2007510788-A | — | — | 2007-04-26 | — | — | JP | claimed |
| EP-1685165-A1 | INITIATOR SYSTEMS FOR POLYMERISABLE COMPOSITIONS | Huntsman Advanced Materials (Switzerland) GmbH (CH) | 2006-08-02 | — | — | EP | claimed |
| WO-2005044867-A1 | INITIATOR SYSTEMS FOR POLYMERISABLE COMPOSITIONS | HUNTSMAN ADVANCED MATERIALS (SWITZERLAND) GMBH (CH) | 2005-05-19 | — | — | WO | claimed |
| US-20040033445-A1 | Method of forming a photoresist pattern and method for patterning a layer using a photoresist | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2004-02-19 | — | — | US | claimed |
| EP-0671483-B1 | Method for vapor deposition of a ceramic coating using a steam-containing carrier gas and non-alkoxy silane precursors | ENICHEM SPA (IT) | 1997-12-29 | — | — | EP | claimed |
| EP-0671483-A1 | Ceramic vapor deposited coating using a steam-containing carrier gas and non-alkoxy silane precursors | ENICHEM S.p.A. (IT) | 1995-09-13 | — | — | EP | claimed |
| US-5424095-A | Decomposing organosilicon precursor inside chemical reactor to form film of ceramic material on surface; prevents coking | ENIRICERCHE S.P.A. (IT) | 1995-06-13 | — | — | US | claimed |