SCHEMBL2104523

SCHEMBL2104523

CN(C)[SiH](Cl)N(C)C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2099965 0.74
SCHEMBL2101336 0.70
Trimethylammonium SCHEMBL10388237 0.67
Trimethylammonium SCHEMBL27531397 0.60
SCHEMBL22287335 0.60
SCHEMBL23300848 0.60
Trimethylammonium SCHEMBL27311607 0.57
SCHEMBL234006 0.56
SCHEMBL258875 0.56
SCHEMBL35636 0.56

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 15 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20260090293-A1 SEMICONDUCTOR STACKS AND PROCESSES THEREOF LAM RES CORP (US) 2026-03-26 US disclosed
EP-4591341-A1 SEMICONDUCTOR STACKS AND PROCESSES THEREOF LAM Research Corporation (US) 2025-07-30 EP disclosed
WO-2024064161-A1 SEMICONDUCTOR STACKS AND PROCESSES THEREOF LAM RESEARCH CORPORATION (US) 2024-03-28 WO disclosed
US-11118050-B2 Functionalized polymer, rubber composition and pneumatic tire THE GOODYEAR TIRE & RUBBER COMPANY (US) 2021-09-14 US disclosed
US-11028108-B2 Method for producing dialkylaminosilane JNC CORPORATION (JP) 2021-06-08 US disclosed
CN-107406466-B Process for producing dialkylaminosilane 捷恩智株式会社 2021-05-11 CN disclosed
US-20200123180-A1 METHOD FOR PRODUCING DIALKYLAMINOSILANE JNC CORPORATION (JP) 2020-04-23 US disclosed
EP-3275886-B1 METHOD FOR PRODUCING DIALKYLAMINOSILANE JNC CORP (JP) 2020-03-11 EP disclosed
CN-110325539-A The manufacturing method of dialkyl amino base silane 捷恩智株式会社 2019-10-11 CN disclosed
US-20170298187-A1 SILICONE RESIN, ENCAPSULATING MATERIAL COMPOSITION FOR UV-LED, CURED PRODUCT AND ENCAPSULATING MATERIAL FOR UV-LED SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2017-10-19 US disclosed
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20120021127-A1 MATERIAL FOR CHEMICAL VAPOR DEPOSITION AND PROCESS FOR FORMING SILICON-CONTAINING THIN FILM USING SAME ADEKA CORPORATION (JP) 2012-01-26 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed