SCHEMBL2113598

SCHEMBL2113598

O=C(O)c1c2ccccc2cc2ccc(O)c(O)c12

nearest known ligand 0.62

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ CYP1A2 P05177 2/20 0.62
▸ KDM4E B2RXH2 2/20 0.62
▸ ALDH1A1 P00352 2/20 0.62
▸ GLA P06280 2/20 0.62
▸ HPGD P15428 2/20 0.62
▸ HSD17B10 Q99714 2/20 0.62
▸ MEN1 O00255 1/20 0.62
▸ CYP2C19 P33261 1/20 0.62
▸ KMT2A Q03164 1/20 0.62
▸ PTPN22 Q9Y2R2 1/20 0.47
▸ CDK2 P24941 2/20 0.47
▸ GPR35 Q9HC97 2/20 0.46
▸ RNASEH1 O60930 1/20 0.46
▸ PTPN11 Q06124 1/20 0.46
▸ ATG4B Q9Y4P1 1/20 0.46
▸ ME2 P23368 1/20 0.46
▸ ME1 P48163 1/20 0.46
▸ ME3 Q16798 1/20 0.46
▸ LDHA P00338 1/20 0.45
▸ CYP3A4 P08684 1/20 0.44

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL29779946 0.81 CYP1A2 (0.68) CYP1A2KDM4EALDH1A1GLAHPGD
SCHEMBL88986 0.81 CYP1A2 (0.68) CYP1A2KDM4EALDH1A1GLAHPGD
SCHEMBL8078314 0.80 ALDH1A1 (0.53) CYP1A2KDM4EALDH1A1GLAHPGD
Hydrochloric Acid SCHEMBL11313207 0.80 CYP1A2 (0.66) CYP1A2KDM4EALDH1A1GLAHPGD
SCHEMBL28215197 0.79 LDHA (0.60) CYP1A2KDM4EALDH1A1GLAHPGD
SCHEMBL11107827 0.79 PTPN22 (0.63) CYP1A2ALDH1A1HSD17B10MEN1CYP2C19
Anthracene-9-Carboxylic Acid SCHEMBL122832 0.78 MEN1 (1.00) CYP1A2KDM4EALDH1A1GLAHPGD
Anthracene-9-Carboxylic Acid SCHEMBL29352186 0.78 MEN1 (1.00) CYP1A2KDM4EALDH1A1GLAHPGD
SCHEMBL12492349 0.78 PTPN22 (0.68) CYP1A2KDM4EALDH1A1GLAHPGD
SCHEMBL4268 0.77 ALDH1A1 (0.61) CYP1A2KDM4EALDH1A1GLAHPGD

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 15 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8158568-B2 Cleaning liquid used in process for forming dual damascene structure and a process for treating substrate therewith TOKYO OHKA KOGYO CO., LTD. (JP) 2012-04-17 — — US disclosed
EP-1641908-B1 CLEANING COMPOSITION, METHOD OF CLEANING SEMICONDUCTOR SUBSTRATE, AND METHOD OF FORMING WIRING ON SEMICONDUCTOR SUBSTRATE TOKYO OHKA KOGYO CO LTD (JP) 2010-11-17 — — EP disclosed
US-20100248477-A1 Cleaning liquid used in process for forming dual damascene structure and a process for treating a substrate therewith YOKOI SHIGERU 2010-09-30 — — US disclosed
CN-1849386-B Cleaning composition, method for cleaning semiconductor substrate, and method for forming wiring on semiconductor substrate TOKYO OHKA KOGYO CO LTD INTEL 2010-07-28 — — CN disclosed
US-20100051582-A1 Cleaning liquid used in process for forming dual damascene structure and a process for treating substrate therewith YOKOI SHIGERU 2010-03-04 — — US disclosed
CN-100504620-C Etching solution for forming bimetallic mosaic structure and base plate treatment method TOKYO APPLIED CHEMICAL INDUSTR (JP) 2009-06-24 — — CN disclosed
US-20090156005-A1 Cleaning liquid used in process for forming dual damascene structure and a process for treating substrate therewith YOKOI SHIGERU 2009-06-18 — — US disclosed
US-7442675-B2 Cleaning composition and method of cleaning semiconductor substrate TOKYO OHKA KOGYO CO., LTD. (JP) 2008-10-28 — — US disclosed
US-20060241012-A1 Cleaning liquid used in process for forming dual damascene structure and a process for treating substrate therewith YOKOI SHIGERU 2006-10-26 — — US disclosed
CN-1849386-A Cleaning composition, method for cleaning semiconductor substrate, and method for forming wiring on semiconductor substrate TOKYO OHKA KOGYO CO LTD INTEL (JP) 2006-10-18 — — CN disclosed
US-20040259761-A1 Cleaning composition, method of cleaning semiconductor substrate, and method of forming wiring on semiconductor substrate TOKYO OHKA KOGYO CO., LTD. INTEL CORPORATION 2004-12-23 — — US disclosed
US-20040121937-A1 Cleaning liquid used in process for forming dual damascene structure and a process for treating substrate therewith TOKYO OHKA KOGYO CO., LTD. (JP) 2004-06-24 — — US disclosed
CN-1495535-A Etching solution for forming bimetallic mosaic structure craft and base phate treatment method ͬ�Ϳ�ҵ��ʽ���� 2004-05-12 — — CN disclosed
US-6515073-B2 Comprising di-, tri- and/or tetra-(alkoxy/phenoxy)silanes and a thermosetting resin which can be condensed therewith which has an absorption capacity with respect to exposing light; can be etched at high rate for fine resist patterns TOKYO OHKA KOGYO CO., LTD. (JP) 2003-02-04 — — US disclosed
US-20010036998-A1 Anti-reflective coating-forming composition TOKYO OHKA KOGYO CO., LTD. (JP) 2001-11-01 — — US disclosed
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