Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CYP3A4 | P08684 | 4/20 | 0.40 |
| ▸ | MEN1 | O00255 | 3/20 | 0.40 |
| ▸ | KMT2A | Q03164 | 3/20 | 0.40 |
| ▸ | HPGD | P15428 | 1/20 | 0.40 |
| ▸ | BACE1 | P56817 | 1/20 | 0.39 |
| ▸ | FASN | P49327 | 1/20 | 0.39 |
| ▸ | NQO1 | P15559 | 1/20 | 0.38 |
| ▸ | TDP1 | Q9NUW8 | 2/20 | 0.36 |
| ▸ | PTGS1 | P23219 | 1/20 | 0.36 |
| ▸ | DRD3 | P35462 | 1/20 | 0.36 |
| ▸ | BCL2 | P10415 | 1/20 | 0.35 |
| ▸ | MCL1 | Q07820 | 1/20 | 0.35 |
| ▸ | LCK | P06239 | 1/20 | 0.35 |
| ▸ | CA2 | P00918 | 2/20 | 0.35 |
| ▸ | CA12 | O43570 | 1/20 | 0.35 |
| ▸ | CA1 | P00915 | 1/20 | 0.35 |
| ▸ | CA9 | Q16790 | 1/20 | 0.35 |
| ▸ | GAA | P10253 | 3/20 | 0.34 |
| ▸ | MAPT | P10636 | 2/20 | 0.34 |
| ▸ | MGAM | O43451 | 1/20 | 0.34 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2114380 | 0.83 | CYP3A4 (0.47) | CYP3A4MEN1KMT2AHPGDTDP1 | |
| SCHEMBL6851820 | 0.80 | CYP3A4 (0.39) | CYP3A4MEN1KMT2AHPGDBACE1 | |
| SCHEMBL23484448 | 0.80 | CA2 (0.44) | CYP3A4MEN1KMT2AHPGDBACE1 | |
| SCHEMBL668197 | 0.80 | NQO1 (0.42) | CYP3A4MEN1KMT2AHPGDBACE1 | |
| SCHEMBL23484449 | 0.79 | POLB (0.56) | MEN1KMT2AHPGDTDP1PTGS1 | |
| SCHEMBL34468636 | 0.78 | CYP3A4 (0.42) | CYP3A4MEN1KMT2AHPGDBACE1 | |
| SCHEMBL27670861 | 0.78 | MEN1 (0.33) | CYP3A4MEN1KMT2AHPGDPTGS1 | |
| SCHEMBL34468648 | 0.76 | RAPGEF4 (0.58) | CYP3A4KMT2AHPGDTDP1CA2 | |
| Potassium Ion SCHEMBL28961632 | 0.76 | PTGS1 (0.43) | CYP3A4MEN1KMT2AHPGDBACE1 | |
| SCHEMBL28921036 | 0.76 | PTPN1 (0.43) | CYP3A4MEN1KMT2AHPGDBACE1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 27 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8158568-B2 | Cleaning liquid used in process for forming dual damascene structure and a process for treating substrate therewith | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-04-17 | — | — | US | disclosed |
| EP-1641908-B1 | CLEANING COMPOSITION, METHOD OF CLEANING SEMICONDUCTOR SUBSTRATE, AND METHOD OF FORMING WIRING ON SEMICONDUCTOR SUBSTRATE | TOKYO OHKA KOGYO CO LTD (JP) | 2010-11-17 | — | — | EP | disclosed |
| US-20100248477-A1 | Cleaning liquid used in process for forming dual damascene structure and a process for treating a substrate therewith | YOKOI SHIGERU | 2010-09-30 | — | — | US | disclosed |
| US-20100051582-A1 | Cleaning liquid used in process for forming dual damascene structure and a process for treating substrate therewith | YOKOI SHIGERU | 2010-03-04 | — | — | US | disclosed |
| US-20090156005-A1 | Cleaning liquid used in process for forming dual damascene structure and a process for treating substrate therewith | YOKOI SHIGERU | 2009-06-18 | — | — | US | disclosed |
| US-7442675-B2 | Cleaning composition and method of cleaning semiconductor substrate | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-10-28 | — | — | US | disclosed |
| CN-100346230-C | Material for preservative formation | TOKYO O KAGAKU KOGYO CO LTD (JP) | 2007-10-31 | — | — | CN | disclosed |
| US-7179399-B2 | Material for forming protective film | TOKYO OHKA KOGYO CO., LTD. (JP) | 2007-02-20 | — | — | US | disclosed |
| US-20060241012-A1 | Cleaning liquid used in process for forming dual damascene structure and a process for treating substrate therewith | YOKOI SHIGERU | 2006-10-26 | — | — | US | disclosed |
| EP-1641908-A1 | CLEANING COMPOSITION, METHOD OF CLEANING SEMICONDUCTOR SUBSTRATE, AND METHOD OF FORMING WIRING ON SEMICONDUCTOR SUBSTRATE | TOKYO OHKA KOGYO CO., LTD. (JP) | 2006-04-05 | — | — | EP | disclosed |
| US-6544717-B2 | Antireflective coating | TOKYO OHKA KOGYO CO., LTD. (JP) | 2003-04-08 | — | — | US | disclosed |
| US-20030032280-A1 | Method for filling fine hole | TOKYO OHKA KOGYO CO., LTD. (JP) | 2003-02-13 | — | — | US | disclosed |
| US-6515073-B2 | Comprising di-, tri- and/or tetra-(alkoxy/phenoxy)silanes and a thermosetting resin which can be condensed therewith which has an absorption capacity with respect to exposing light; can be etched at high rate for fine resist patterns | TOKYO OHKA KOGYO CO., LTD. (JP) | 2003-02-04 | — | — | US | disclosed |
| CN-1388414-A | Material for preservative formation | TOKYO O KAGAKU KOGYO CO LTD (JP) | 2003-01-01 | — | — | CN | disclosed |
| US-20020182360-A1 | Material for forming protective film | TOKYO OHKA KOGYO CO., LTD. (JP) | 2002-12-05 | — | — | US | disclosed |
| US-20020055064-A1 | Anti-reflective coating composition, multilayer photoresist material using the same, and method for forming pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2002-05-09 | — | — | US | disclosed |
| US-20010049072-A1 | Undercoating composition for photolithographic resist | HIROSAKI TAKAKO (JP) | 2001-12-06 | — | — | US | disclosed |
| US-20010036998-A1 | Anti-reflective coating-forming composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 2001-11-01 | — | — | US | disclosed |
| US-6284428-B1 | FOR FORMING OF ANTIREFLECTION UNDERCOATING LAYER TO INTERVENE BETWEEN SURFACE OF SUBSTRATE AND PHOTORESIST LAYER TO BE PATTERNED IN MANUFACTURING PROCESS OF SEMICONDUCTOR DEVICES | TOKYO OHKA KOGYO CO., LTD, (JP) | 2001-09-04 | — | — | US | disclosed |
| US-20010018163-A1 | Undercoating composition for photolithographic resist | TOKYO OHKA KOGYO CO., LTD. (JP) | 2001-08-30 | — | — | US | disclosed |