SCHEMBL2115686

SCHEMBL2115686

CO[SiH](Oc1ccccc1)Oc1ccccc1

nearest known ligand 0.50

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CA4 P22748 2/20 0.50
LTA4H P09960 5/20 0.42
TSHR P16473 1/20 0.41
KCNA3 P22001 1/20 0.35
TRPA1 O75762 1/20 0.33
CA5A P35218 1/20 0.33
CA5B Q9Y2D0 1/20 0.33
CA12 O43570 1/20 0.33
CA1 P00915 1/20 0.33
CA2 P00918 1/20 0.33
CA7 P43166 1/20 0.33
CA9 Q16790 1/20 0.33
CA14 Q9ULX7 1/20 0.33
MAOB P27338 1/20 0.32
LMNA P02545 1/20 0.32
HTR1D P28221 1/20 0.32
HTR1B P28222 1/20 0.32
NR1H2 P55055 1/20 0.32
BAX Q07812 1/20 0.32
MAOA P21397 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL7058914 0.95 CA4 (0.50) CA4LTA4HTSHRKCNA3TRPA1
SCHEMBL275159 0.83 LTA4H (0.50) CA4LTA4HTSHRKCNA3CA5A
SCHEMBL19926950 0.83 LTA4H (0.39) CA4LTA4HTSHRKCNA3MAOB
SCHEMBL4427583 0.80 CA4 (0.46) CA4LTA4HTSHRKCNA3TRPA1
SCHEMBL1609075 0.77 CA4 (0.48) CA4LTA4HTSHRKCNA3TRPA1
SCHEMBL27704021 0.74 CA4 (0.50) CA4LTA4HTSHRKCNA3TRPA1
SCHEMBL7698665 0.74 LTA4H (0.41) CA4LTA4HTSHRKCNA3CA5A
SCHEMBL1609017 0.73 LTA4H (0.43) CA4LTA4HTSHRKCNA3LMNA
SCHEMBL3297484 0.73 CA4 (0.44) CA4LTA4HTSHRKCNA3TRPA1
SCHEMBL2114550 0.73 LTA4H (0.43) CA4LTA4HTSHRKCNA3LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 100 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11912889-B2 Silicon-containing polymer, film-forming composition, method for forming silicon-containing polymer coating, method for forming silica coating, and production method for silicon-containing polymer TOKYO OHKA KOGYO CO., LTD. (JP) 2024-02-27 US disclosed
US-20230257503-A1 RESIN COMPOSITION, CURED PRODUCT AND MANUFACTURING METHOD THEREFOR, AND LAMINATE MITSUBISHI CHEMICAL CORPORATION (JP) 2023-08-17 US disclosed
EP-4212256-A1 RESIN COMPOSITION, CURED PRODUCT AND MANUFACTURING METHOD THEREFOR, AND LAMINATE Mitsubishi Chemical Corporation (JP) 2023-07-19 EP disclosed
CN-116075368-A Resin composition, cured product, method for producing same, and laminate 三菱化学株式会社 2023-05-05 CN disclosed
US-11542397-B2 Liquid composition, quantum dot-containing film, optical film, light-emitting display element panel, and light-emitting display device TOKYO OHKA KOGYO CO., LTD. (JP) 2023-01-03 US disclosed
CN-110249004-B Polyimide precursor composition 东京应化工业株式会社 2022-07-19 CN disclosed
US-20220220338-A1 SILICON-CONTAINING POLYMER, FILM-FORMING COMPOSITION, METHOD FOR FORMING SILICON-CONTAINING POLYMER COATING, METHOD FOR FORMING SILICA COATING, AND PRODUCTION METHOD FOR SILICON-CONTAINING POLYMER TOKYO OHKA KOGYO CO., LTD. (JP) 2022-07-14 US disclosed
US-20220213348-A1 SILICON-CONTAINING POLYMER, FILM-FORMING COMPOSITION, METHOD FOR SUPPORTING METAL COMPOUND ON SURFACE OF OBJECT TO BE TREATED, ARTICLE HAVING METAL COMPOUND-SUPPORTING COATING FILM, AND METHOD FOR PRODUCING SILICON-CONTAINING POLYMER TOKYO OHKA KOGYO CO., LTD. (JP) 2022-07-07 US disclosed
US-11377522-B2 Silicon-containing polymer, film-forming composition, method for forming silicon-containing polymer coating, method for forming silica-based coating, and production method for silicon-containing polymer TOKYO OHKA KOGYO CO., LTD. (JP) 2022-07-05 US disclosed
CN-108389512-B Laminate, flexible device, and method for producing laminate 东京应化工业株式会社 2022-04-15 CN disclosed
EP-1236731-B1 Method and apparatus for forming a carbon-silicon bond in a silane GEN ELECTRIC (US) 2004-05-06 EP disclosed
US-6515073-B2 Comprising di-, tri- and/or tetra-(alkoxy/phenoxy)silanes and a thermosetting resin which can be condensed therewith which has an absorption capacity with respect to exposing light; can be etched at high rate for fine resist patterns TOKYO OHKA KOGYO CO., LTD. (JP) 2003-02-04 US disclosed
US-6489501-B2 REACTING A TRANSITION METAL HYDRIDE WITH A STARTING SILANE SUCH AS TETRAPHENOXYSILANE IN A PRESENCE OF A CATALYST; AVOIDS USING THE COSTLY ENERGY CONSUMING REDUCTION OF SILICON DIOXIDE TO ELEMENTAL SILICON GENERAL ELECTRIC COMPANY 2002-12-03 US disclosed
US-20020161254-A1 METHOD AND APPARATUS FOR FORMING A CARBON-SILICON BOND IN A SILANE GENERAL ELECTRIC COMPANY 2002-10-31 US disclosed
EP-1236731-A1 Method and apparatus for forming a carbon-silicon bond in a silane GENERAL ELECTRIC COMPANY (US) 2002-09-04 EP disclosed
US-20010036998-A1 Anti-reflective coating-forming composition TOKYO OHKA KOGYO CO., LTD. (JP) 2001-11-01 US disclosed
EP-0693513-B1 Process for purifying a polyether ASAHI GLASS CO LTD (JP) 2001-01-10 EP disclosed
US-5973096-A A CURABLE POLYETHER CONTAINING A HYDROLYZABLE AND SILICON GROUPS WITH IONIC IMPURITIES ASAHI GLASS COMPANY LTD. (JP) 1999-10-26 US disclosed
US-5811566-A TREATING POLYETHER HAVING UNSATURATED END GROUPS WITH AN ACID WHICH WILL REACT WITH SALT IMPURITIES, ADDING WATER, SURFACTANT AND ADSORBER, FILTRATION, FOR REMOVING CATALYST RESIDUES ASAHI GLASS COMPANY LTD. (JP) 1998-09-22 US disclosed
EP-0693513-A2 Process for purifying a polyether ASAHI GLASS COMPANY LTD. (JP) 1996-01-24 EP disclosed