⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL31258202 | 0.87 | — | — | |
| SCHEMBL718272 | 0.87 | — | — | |
| SCHEMBL2671129 | 0.75 | — | — | |
| Charcoal, Activated SCHEMBL31257934 | 0.75 | — | — | |
| SCHEMBL5013176 | 0.75 | — | — | |
| SCHEMBL597804 | 0.75 | — | — | |
| Charcoal, Activated SCHEMBL31425227 | 0.75 | — | — | |
| SCHEMBL775316 | 0.75 | — | — | |
| SCHEMBL1415137 | 0.71 | — | — | |
| SCHEMBL3580878 | 0.71 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8759170-B2 | Hafnium tantalum oxynitride dielectric | MICRON TECHNOLOGY, INC. (US) | 2014-06-24 | — | — | US | disclosed |
| US-20130279259-A1 | HAFNIUM TANTALUM OXYNITRIDE DIELECTRIC | MICRON TECHNOLOGY, INC. | 2013-10-24 | — | — | US | disclosed |
| US-8466016-B2 | Hafnium tantalum oxynitride dielectric | MICRON TECHNOLGY, INC. (US) | 2013-06-18 | — | — | US | disclosed |
| US-20120094477-A1 | HAFNIUM TANTALUM OXYNITRIDE DIELECTRIC | MICRON SEMICONDUCTOR PRODUCTS, INC. | 2012-04-19 | — | — | US | disclosed |
| US-8084370-B2 | Hafnium tantalum oxynitride dielectric | MICRON TECHNOLOGY, INC. (US) | 2011-12-27 | — | — | US | disclosed |
| US-20100041244-A1 | HAFNIUM TANTALUM OXYNITRIDE DIELECTRIC | MICRON TECHNOLOGY, INC. | 2010-02-18 | — | — | US | disclosed |
| US-7605030-B2 | Hafnium tantalum oxynitride high-k dielectric and metal gates | MICRON TECHNOLOGY, INC. (US) | 2009-10-20 | — | — | US | disclosed |
| US-20080124908-A1 | Hafnium tantalum oxynitride high-k dielectric and metal gates | MICRON TECHNOLOGY, INC. | 2008-05-29 | — | — | US | disclosed |