⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL715758 | 0.87 | — | — | |
| SCHEMBL718272 | 0.87 | — | — | |
| SCHEMBL8832642 | 0.87 | — | — | |
| SCHEMBL868855 | 0.87 | — | — | |
| Charcoal, Activated SCHEMBL729513 | 0.75 | — | — | |
| SCHEMBL2116854 | 0.75 | — | — | |
| SCHEMBL31169090 | 0.75 | — | — | |
| SCHEMBL2254437 | 0.75 | — | — | |
| SCHEMBL5013176 | 0.75 | — | — | |
| SCHEMBL2254434 | 0.75 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8951880-B2 | Dielectrics containing at least one of a refractory metal or a non-refractory metal | MICRON TECHNOLOGY, INC. (US) | 2015-02-10 | — | — | US | disclosed |
| US-20140322923-A1 | DIELECTRICS CONTAINING AT LEAST ONE OF A REFRACTORY METAL OR A NON-REFRACTORY METAL | MICRON TECHNOLOGY, INC. | 2014-10-30 | — | — | US | disclosed |
| US-8772851-B2 | Dielectrics containing at least one of a refractory metal or a non-refractory metal | MICRON TECHNOLOGY, INC. (US) | 2014-07-08 | — | — | US | disclosed |
| US-20140035101-A1 | DIELECTRICS CONTAINING AT LEAST ONE OF A REFRACTORY METAL OR A NON-REFRACTORY METAL | MICRON TECHNOLOGY, INC. (US) | 2014-02-06 | — | — | US | disclosed |
| US-8557672-B2 | Dielectrics containing at least one of a refractory metal or a non-refractory metal | MICRON TECHNOLOGY, INC. (US) | 2013-10-15 | — | — | US | disclosed |
| US-20120133428-A1 | DIELECTRICS CONTAINING AT LEAST ONE OF A REFRACTORY METAL OR A NON-REFRACTORY METAL | MICRON SEMICONDUCTOR PRODUCTS, INC. | 2012-05-31 | — | — | US | disclosed |
| US-8114763-B2 | Tantalum aluminum oxynitride high-K dielectric | MICRON TECHNOLOGY, INC. (US) | 2012-02-14 | — | — | US | disclosed |
| US-20100283537-A1 | TANTALUM ALUMINUM OXYNITRIDE HIGH-K DIELECTRIC | MICRON SEMICONDUCTOR PRODUCTS, INC. | 2010-11-11 | — | — | US | disclosed |
| US-7759747-B2 | Tantalum aluminum oxynitride high-κ dielectric | MICRON TECHNOLOGY, INC. (US) | 2010-07-20 | — | — | US | disclosed |
| US-20080121962-A1 | Tantalum aluminum oxynitride high-k dielectric and metal gates | MICRON TECHNOLOGY, INC. | 2008-05-29 | — | — | US | disclosed |