SCHEMBL2671129

SCHEMBL2671129

[N].[O].[Si].[Ta]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL716950 0.87
SCHEMBL5412286 0.87
SCHEMBL29788990 0.87
SCHEMBL895890 0.87
SCHEMBL10890316 0.87
SCHEMBL718272 0.87
SCHEMBL717733 0.87
SCHEMBL2116854 0.75
SCHEMBL8506328 0.75
SCHEMBL775316 0.75

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-100393409-C Junction substrate and method of bonding substrates together CASIO COMPUTER CO LTD (JP) 2008-06-11 CN claimed
CN-1744944-A Bonded substrates and methods of bonding substrates together CASIO COMPUTER CO LTD (JP) 2006-03-08 CN claimed
US-8519466-B2 Tantalum silicon oxynitride high-K dielectrics and metal gates MICRON TECHNOLOGY, INC. (US) 2013-08-27 US disclosed
US-20120205720-A1 TANTALUM SILICON OXYNITRIDE HIGH-K DIELECTRICS AND METAL GATES MICRON SEMICONDUCTOR PRODUCTS, INC. 2012-08-16 US disclosed
US-8168502-B2 Tantalum silicon oxynitride high-K dielectrics and metal gates MICRON TECHNOLOGY, INC. (US) 2012-05-01 US disclosed
US-20100301428-A1 TANTALUM SILICON OXYNITRIDE HIGH-K DIELECTRICS AND METAL GATES MICRON SEMICONDUCTOR PRODUCTS, INC. 2010-12-02 US disclosed
US-7776765-B2 Tantalum silicon oxynitride high-k dielectrics and metal gates MICRON TECHNOLOGY, INC. (US) 2010-08-17 US disclosed
CN-100393409-C Junction substrate and method of bonding substrates together CASIO COMPUTER CO LTD (JP) 2008-06-11 CN disclosed
US-20080057690-A1 Tantalum silicon oxynitride high-k dielectrics and metal gates MICRON TECHNOLOGY, INC. 2008-03-06 US disclosed
CN-1744944-A Bonded substrates and methods of bonding substrates together CASIO COMPUTER CO LTD (JP) 2006-03-08 CN disclosed
EP-1100684-B1 INK-JET PRINTER HEAD AND MANUFACTURING METHOD THEREOF CASIO COMPUTER CO LTD (JP) 2003-08-06 EP disclosed
US-6350017-B1 Ink-jet printer head and manufacturing method thereof CASIO COMPUTER CO., LTD. (JP) 2002-02-26 US disclosed