SCHEMBL2146305

SCHEMBL2146305

O=C1NC2N(COC34CC5CC(CC(C5)C3)C4)C(=O)N(COC34CC5CC(CC(C5)C3)C4)C2(COC23CC4CC(CC(C4)C2)C3)N1COC12CC3CC(CC(C3)C1)C2

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL236776 0.73 EPHX2 (0.33)
SCHEMBL722579 0.67 TDP1 (0.43)
SCHEMBL1428796 0.66
SCHEMBL12504705 0.62 ALDH1A1 (0.43)
SCHEMBL2546505 0.57 NPSR1 (0.43)
SCHEMBL6420357 0.56 NPSR1 (0.39)
SCHEMBL5933278 0.54 ALDH1A1 (0.37)
SCHEMBL4389244 0.54 ALDH1A1 (0.41)
SCHEMBL11907650 0.54 NPSR1 (0.36)
SCHEMBL64382 0.53 L3MBTL1 (0.32)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2013065878-A1 METHOD OF FORMING PATTERN AND COMPOSITION FOR CROSSLINKED LAYER FORMATION TO BE USED IN THE METHOD FUJIFILM CORPORATION (JP) 2013-05-10 WO disclosed
EP-2521941-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM FUJIFILM Corporation (JP) 2012-11-14 EP disclosed
EP-2384458-A1 NEGATIVE RESIST PATTERN FORMING METHOD, DEVELOPER AND NEGATIVE CHEMICAL-AMPLIFICATION RESIST COMPOSITION USED THEREFOR, AND RESIST PATTERN FUJIFILM Corporation (JP) 2011-11-09 EP disclosed
WO-2011102546-A1 PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2011-08-25 WO disclosed
WO-2011087144-A1 PATTERN FORMING METHOD, PATTERN, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2011-07-21 WO disclosed
WO-2011083872-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2011-07-14 WO disclosed
WO-2010087516-A1 NEGATIVE RESIST PATTERN FORMING METHOD, DEVELOPER AND NEGATIVE CHEMICAL-AMPLIFICATION RESIST COMPOSITION USED THEREFOR, AND RESIST PATTERN FUJIFILM CORPORATION (JP) 2010-08-05 WO disclosed