Predicted protein targets (top 9)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ESR2 | Q92731 | 14/20 | 0.53 |
| ▸ | ESR1 | P03372 | 11/20 | 0.53 |
| ▸ | SLC6A2 | P23975 | 2/20 | 0.45 |
| ▸ | SLC6A4 | P31645 | 2/20 | 0.45 |
| ▸ | SLC6A3 | Q01959 | 2/20 | 0.45 |
| ▸ | DRD2 | P14416 | 1/20 | 0.41 |
| ▸ | DRD1 | P21728 | 1/20 | 0.41 |
| ▸ | DRD5 | P21918 | 1/20 | 0.41 |
| ▸ | DRD3 | P35462 | 1/20 | 0.41 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL29646250 | 1.00 | ESR2 (0.53) | ESR2ESR1SLC6A2SLC6A4SLC6A3 | |
| SCHEMBL218608 | 0.84 | ALDH1A1 (0.44) | ESR2ESR1SLC6A2SLC6A4SLC6A3 | |
| SCHEMBL29646238 | 0.84 | ALDH1A1 (0.44) | ESR2ESR1SLC6A2SLC6A4SLC6A3 | |
| SCHEMBL29646235 | 0.84 | ALDH1A1 (0.44) | ESR2ESR1SLC6A2SLC6A4SLC6A3 | |
| SCHEMBL29890280 | 0.79 | ESR2 (0.58) | ESR2ESR1DRD2DRD1DRD5 | |
| SCHEMBL1495880 | 0.79 | ESR2 (0.58) | ESR2ESR1DRD2DRD1DRD5 | |
| SCHEMBL14515033 | 0.75 | ALDH1A1 (0.41) | ESR2ESR1 | |
| SCHEMBL4542614 | 0.74 | MAPT (0.40) | ESR2ESR1 | |
| SCHEMBL13899939 | 0.74 | ESR2 (0.69) | ESR2ESR1 | |
| SCHEMBL19540263 | 0.74 | ESR2 (0.56) | ESR2ESR1SLC6A2SLC6A4SLC6A3 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 177 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-7303855-B2 | Photoresist undercoat-forming material and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-12-04 | — | — | US | claimed |
| US-20060019195-A1 | Photoresist undercoat-forming material and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2006-01-26 | — | — | US | claimed |
| US-20240242967-A1 | Polymer For Forming Metal-Containing Film, Composition For Forming Metal-Containing Film, And Patterning Process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-07-18 | — | — | US | disclosed |
| EP-4398037-A1 | COMPOUND FOR FORMING METAL-CONTAINING FILM, COMPOSITION FOR FORMING METAL-CONTAINING FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-07-10 | — | — | EP | disclosed |
| US-12032293-B2 | Composition for forming organic film, patterning process, and polymer | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-07-09 | — | — | US | disclosed |
| EP-4390547-A1 | POLYMER FOR FORMING METAL-CONTAINING FILM, COMPOSITION FOR FORMING METAL-CONTAINING FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-06-26 | — | — | EP | disclosed |
| EP-3835380-B1 | MATERIAL FOR FORMING ORGANIC FILM, METHOD FOR FORMING ORGANIC FILM, PATTERNING PROCESS, AND COMPOUND | SHINETSU CHEMICAL CO (JP) | 2024-04-24 | — | — | EP | disclosed |
| EP-3764162-B1 | COMPOSITION FOR FORMING ORGANIC FILM, PATTERNING PROCESS, AND POLYMER | SHINETSU CHEMICAL CO (JP) | 2024-04-17 | — | — | EP | disclosed |
| EP-3876035-B1 | COATING-TYPE COMPOSITION FOR FORMING ORIGINAL FILM, PATTERNING PROCESS, POLYMER, AND METHOD FOR MANUFACTURING POLYMER | SHINETSU CHEMICAL CO (JP) | 2024-04-17 | — | — | EP | disclosed |
| US-20240116958-A1 | Compound For Forming Metal-Containing Film, Composition For Forming Metal-Containing Film, Patterning Process, And Semiconductor Photoresist Material | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-04-11 | — | — | US | disclosed |
| EP-4339702-A1 | COMPOUND FOR FORMING METAL-CONTAINING FILM, COMPOSITION FOR FORMING METAL-CONTAINING FILM, PATTERNING PROCESS, AND SEMICONDUCTOR PHOTORESIST MATERIAL | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-03-20 | — | — | EP | disclosed |
| US-20080312373-A1 | POLYCARBONATE-POLY(ALKYLENE OXIDE) COPOLYMER COMPOSITIONS AND ARTICLES FORMED THEREFROM | GENERAL ELECTRIC COMPANY (US) | 2008-12-18 | — | — | US | disclosed |
| US-7358025-B2 | Etching resistance; novolak resin having a fluorene or tetrahydrospirobiindene structure, an organic solvent, an acid generator, and a crosslinker, optionally combined with an intermediate layer having an antireflective effect | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-04-15 | — | — | US | disclosed |
| US-20080032231-A1 | Resist lower layer material, resist lower layer substrate comprising the material and method for forming pattern | SHIN-ETSU CHEMICAL CO., LTD. | 2008-02-07 | — | — | US | disclosed |
| US-7303855-B2 | Photoresist undercoat-forming material and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-12-04 | — | — | US | disclosed |
| US-20070275325-A1 | Photoresist undercoat-forming material and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-11-29 | — | — | US | disclosed |
| US-20060234158-A1 | Bottom resist layer composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2006-10-19 | — | — | US | disclosed |
| US-20060204891-A1 | Etching resistance; novolak resin having a fluorene or tetrahydrospirobiindene structure, an organic solvent, an acid generator, and a crosslinker, optionally combined with an intermediate layer having an antireflective effect | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2006-09-14 | — | — | US | disclosed |
| US-20060019195-A1 | Photoresist undercoat-forming material and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2006-01-26 | — | — | US | disclosed |
| EP-0182486-A1 | Silver halide color photographic material | KONICA CORPORATION (JP) | 1986-05-28 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20240116958-A1 | Compound For Forming Metal-Containing Film, Composition For Forming Metal-Containing Film, Patterning Process, And Semiconductor Photoresist Material | FEM1B, ASH2L, MSI2 | ESR2 2542/4885ESR1 1920/4885SLC6A2 1189/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.