⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL7942464 | 0.79 | — | — | |
| SCHEMBL331163 | 0.74 | — | — | |
| SCHEMBL8078361 | 0.74 | — | — | |
| SCHEMBL28044118 | 0.71 | — | — | |
| Fluoride SCHEMBL28044181 | 0.69 | — | — | |
| SCHEMBL25205913 | 0.67 | — | — | |
| SCHEMBL25205866 | 0.67 | — | — | |
| SCHEMBL29901166 | 0.67 | — | — | |
| SCHEMBL10496329 | 0.64 | ALDH1A1 (0.33) | — | |
| SCHEMBL8082803 | 0.64 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 38 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-114752063-A | Preparation method and device of liquid polycarbosilane ceramic precursor | 福建立亚化学有限公司 | 2022-07-15 | — | — | CN | claimed |
| US-9045347-B2 | Stiochiometric silicon carbide fibers from thermo-chemically cured polysilazanes | GENERAL ELECTRIC COMPANY (US) | 2015-06-02 | — | — | US | claimed |
| US-8987402-B2 | Stoichiometric silicon carbide fibers from thermo-chemically cured polysilazanes | GENERAL ELECTRIC COMPANY (US) | 2015-03-24 | — | — | US | claimed |
| US-20120237765-A1 | STIOCHIOMETRIC SILICON CARBIDE FIBERS FROM THERMO-CHEMICALLY CURED POLYSILAZANES | GENERAL ELECTRIC COMPANY | 2012-09-20 | — | — | US | claimed |
| US-20110212329-A1 | STIOCHIOMETRIC SILICON CARBIDE FIBERS FROM THERMO-CHEMICALLY CURED POLYSILAZANES | GENERAL ELECTRIC COMPANY | 2011-09-01 | — | — | US | claimed |
| CN-115605530-B | Polycarbosilazanes and compositions comprising the same and methods of making silicon-containing films using the same | 默克专利有限公司 | 2024-09-27 | — | — | CN | disclosed |
| US-11999827-B2 | Polycarbosilazane, and composition comprising the same, and method for producing silicon-containing film using the same | MERCK PATENT GMBH (DE) | 2024-06-04 | — | — | US | disclosed |
| EP-4146725-B1 | POLYCARBOSILAZANE, AND COMPOSITION COMPRISING THE SAME, AND METHOD FOR PRODUCING SILICON-CONTAINING FILM USING THE SAME | MERCK PATENT GMBH (DE) | 2024-05-22 | — | — | EP | disclosed |
| US-20230174724-A1 | POLYCARBOSILAZANE, AND COMPOSITION COMPRISING THE SAME, AND METHOD FOR PRODUCING SILICON-CONTAINING FILM USING THE SAME | MERCK PATENT GMBH (DE) | 2023-06-08 | — | — | US | disclosed |
| CN-114752063-A | Preparation method and device of liquid polycarbosilane ceramic precursor | 福建立亚化学有限公司 | 2022-07-15 | — | — | CN | disclosed |
| CN-114752063-A | Preparation method and device of liquid polycarbosilane ceramic precursor | 福建立亚化学有限公司 | 2022-07-15 | — | — | CN | disclosed |
| US-20180269480-A1 | SILICON-CARBON NANOSTRUCTURED COMPOSITES | AXIUM IP, LLC (US) | 2018-09-20 | — | — | US | disclosed |
| EP-2264219-A1 | MATERIAL FOR CHEMICAL VAPOR DEPOSITION, SILICON-CONTAINING INSULATING FILM AND PROCESS FOR PRODUCTION THEREOF | JSR Corporation (JP) | 2010-12-22 | — | — | EP | disclosed |
| US-20100292361-A1 | HYDROSILYLATION REACTIONS ACTIVATED THROUGH RADIATION | WACKER CHEMIE AG (DE) | 2010-11-18 | — | — | US | disclosed |
| US-20090085170-A1 | INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2009-04-02 | — | — | US | disclosed |
| US-20080203574-A1 | Polysilsesquioxanes; wear resistance; etching resistance; dielectrics; reduced parasitic capacitance | FUJITSU LIMITED (JP) | 2008-08-28 | — | — | US | disclosed |
| EP-1962336-A2 | Insulating film material , multilayer interconnection structure, method for manufacturing the same and method for manufacturing semiconductor device | Fujitsu Ltd. (JP) | 2008-08-27 | — | — | EP | disclosed |
| US-6251057-B1 | FORMING SILICON-CARBON BONDS FOR USE IN ORGANOSILICON COMPOUNDS SYNTHESIS; ACTIVATED ALKYL HALIDES AND UNACTIVATED ALKYL HALIDES | KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY (KR) | 2001-06-26 | — | — | US | disclosed |
| US-5399740-A | Tris(silyl)methanes and their preparation methods | KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY (KR) | 1995-03-21 | — | — | US | disclosed |
| US-5233069-A | Direct reaction of silicon with a-chloromethylsilanes and hydrogen chloride or alkylchlorides | KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY (KR) | 1993-08-03 | — | — | US | disclosed |