Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | PPARG | P37231 | 5/20 | 0.36 |
| ▸ | PPARA | Q07869 | 5/20 | 0.36 |
| ▸ | PPARD | Q03181 | 2/20 | 0.36 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.36 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.36 |
| ▸ | ENPP1 | P22413 | 1/20 | 0.34 |
| ▸ | KIF11 | P52732 | 1/20 | 0.32 |
| ▸ | SCN9A | Q15858 | 3/20 | 0.32 |
| ▸ | MEN1 | O00255 | 1/20 | 0.32 |
| ▸ | APAF1 | O14727 | 1/20 | 0.32 |
| ▸ | LMNA | P02545 | 1/20 | 0.32 |
| ▸ | MAPT | P10636 | 1/20 | 0.32 |
| ▸ | HTT | P42858 | 1/20 | 0.32 |
| ▸ | RAB9A | P51151 | 1/20 | 0.32 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.32 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.32 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.32 |
| ▸ | KIT | P10721 | 1/20 | 0.31 |
| ▸ | KDR | P35968 | 1/20 | 0.31 |
| ▸ | FLT3 | P36888 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Sulfuric Acid SCHEMBL15345275 | 0.91 | PPARG (0.37) | PPARGPPARAPPARDCYP2C9CYP2C19 | |
| SCHEMBL8320148 | 0.91 | PPARA (0.39) | PPARGPPARAPPARDCYP2C9CYP2C19 | |
| Trifluoromethanesulfonic Acid SCHEMBL31061841 | 0.89 | SRD5A2 (0.33) | PPARGPPARAKIF11SCN9AMEN1 | |
| SCHEMBL8651634 | 0.88 | PPARG (0.36) | PPARGPPARAPPARDCYP2C9CYP2C19 | |
| Trifluoromethanesulfonic Acid SCHEMBL3143639 | 0.87 | ENPP1 (0.46) | ENPP1MEN1APAF1LMNAMAPT | |
| SCHEMBL246926 | 0.87 | PPARG (0.38) | PPARGPPARAPPARDCYP2C9CYP2C19 | |
| SCHEMBL8083698 | 0.86 | PPARG (0.34) | PPARGPPARAPPARDCYP2C9CYP2C19 | |
| Trifluoromethanesulfonic Acid SCHEMBL7122599 | 0.85 | ELANE (0.45) | PPARGPPARAPPARDCYP2C9CYP2C19 | |
| Trifluoromethanesulfonic Acid SCHEMBL3421887 | 0.84 | HSD17B10 (0.40) | MEN1APAF1LMNAMAPTHTT | |
| SCHEMBL219087 | 0.83 | TDP1 (0.36) | PPARGPPARAPPARDCYP2C9CYP2C19 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 41 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8586289-B2 | Aromatic hydrocarbon resin and composition for forming underlayer film for lithography | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2013-11-19 | — | — | US | disclosed |
| US-8288072-B2 | Antireflection film; fast etching speed whcih reduces deformation; accuracy; 2,3-epoxypropyl methacrylate ester-styrene copolymer | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-10-16 | — | — | US | disclosed |
| US-20120171611-A1 | AROMATIC HYDROCARBON RESIN AND COMPOSITION FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2012-07-05 | — | — | US | disclosed |
| US-8088554-B2 | Bottom resist layer composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD (JP) | 2012-01-03 | — | — | US | disclosed |
| US-7923195-B2 | Positive resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-04-12 | — | — | US | disclosed |
| US-7887991-B2 | Positive resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-02-15 | — | — | US | disclosed |
| US-7745104-B2 | Polymer having a hydrocarbon chain backbone and containing units derived from norbornadiene, indene, benzofuran, benzothiophene, acenaphthene, or vinyl pyrene, fluorene, phenanthrene, chrysene, naphthacene, pentacene, or acenaphthene; excellent etching resistance; shorter wavelengths | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-06-29 | — | — | US | disclosed |
| US-20100151382-A1 | Bottom resist layer composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-06-17 | — | — | US | disclosed |
| US-7687228-B2 | Antireflection film composition and patterning process using the same | SHIN ETSU CHEMICAL CO., LTD. (JP) | 2010-03-30 | — | — | US | disclosed |
| US-7655378-B2 | Negative resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-02-02 | — | — | US | disclosed |
| US-7163778-B2 | Anti-reflection film material and a substrate having an anti-reflection film and a method for forming a pattern | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-01-16 | — | — | US | disclosed |
| US-20060234158-A1 | Bottom resist layer composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2006-10-19 | — | — | US | disclosed |
| US-20060147836-A1 | Resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2006-07-06 | — | — | US | disclosed |
| US-6933095-B2 | Polymers, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2005-08-23 | — | — | US | disclosed |
| US-6899991-B2 | Photo-curable resin composition, patterning process, and substrate protecting film | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2005-05-31 | — | — | US | disclosed |
| US-20050014092-A1 | Novel compound, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2005-01-20 | — | — | US | disclosed |
| US-20040241577-A1 | Resist lower layer film material and method for forming a pattern | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-12-02 | — | — | US | disclosed |
| US-20040191479-A1 | Anti-reflection film material and a substrate having an anti-reflection film and a method for forming a pattern | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-09-30 | — | — | US | disclosed |
| US-20030113662-A1 | Photo-curable resin composition, patterning process, and substrate protecting film | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2003-06-19 | — | — | US | disclosed |
| US-20030031952-A1 | Polymers, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2003-02-13 | — | — | US | disclosed |