Known targets — ChEMBL curated mechanism
ABL1BMXBRAFBTKCHRNA4CHRNB2CSNK1EEGFRERBB2F10FLT1FLT3FLT4IGF1RINSRITKJAK3KDRKITOPRM1PARP1PARP2PDGFRBPIK3CDRAF1RETSLC18A2TECTXKdacAdacBdacCftsImrcAmrcBmrdArplArplBrplCrplDrplErplFrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmFrpmGrpmHrpmIrpmJrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUykgMykgO
The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TDP1 | Q9NUW8 | 3/20 | 0.36 |
| ▸ | HTT | P42858 | 3/20 | 0.36 |
| ▸ | KDM4E | B2RXH2 | 2/20 | 0.36 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.36 |
| ▸ | MAPT | P10636 | 2/20 | 0.36 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.36 |
| ▸ | L3MBTL1 | Q9Y468 | 2/20 | 0.36 |
| ▸ | LMNA | P02545 | 1/20 | 0.36 |
| ▸ | PTGS2 | P35354 | 4/20 | 0.35 |
| ▸ | PTGS1 | P23219 | 2/20 | 0.34 |
| ▸ | PPARG | P37231 | 3/20 | 0.34 |
| ▸ | PPARA | Q07869 | 3/20 | 0.34 |
| ▸ | CYP2C9 | P11712 | 2/20 | 0.34 |
| ▸ | CYP2D6 | P10635 | 2/20 | 0.34 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.34 |
| ▸ | PPARD | Q03181 | 1/20 | 0.34 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.34 |
| ▸ | BCHE | P06276 | 1/20 | 0.33 |
| ▸ | ACHE | P22303 | 1/20 | 0.33 |
| ▸ | PRSS1 | P07477 | 2/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3144542 | 0.88 | LMNA (0.44) | TDP1HTTKDM4EALDH1A1MAPT | |
| SCHEMBL3143806 | 0.87 | PTGS2 (0.42) | TDP1HTTKDM4EALDH1A1MAPT | |
| SCHEMBL8320148 | 0.87 | PPARA (0.39) | PPARGPPARACYP2C9CYP2C19PPARD | |
| SCHEMBL8078749 | 0.87 | MAOB (0.36) | TDP1HTTKDM4EALDH1A1MAPT | |
| SCHEMBL3140909 | 0.85 | LMNA (0.42) | TDP1HTTKDM4EALDH1A1MAPT | |
| Sulfuric Acid SCHEMBL15345275 | 0.84 | PPARG (0.37) | TDP1HTTMAPTSMN1; SMN2L3MBTL1 | |
| SCHEMBL8904059 | 0.84 | PRSS1 (0.36) | TDP1HTTKDM4EALDH1A1MAPT | |
| SCHEMBL8862185 | 0.84 | PTPN1 (0.44) | ALDH1A1MAPTSMN1; SMN2L3MBTL1LMNA | |
| Trifluoromethanesulfonic Acid SCHEMBL216880 | 0.83 | PPARG (0.36) | TDP1HTTMAPTSMN1; SMN2LMNA | |
| SCHEMBL3135090 | 0.83 | LMNA (0.45) | TDP1HTTKDM4EALDH1A1MAPT |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 38 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8288072-B2 | Antireflection film; fast etching speed whcih reduces deformation; accuracy; 2,3-epoxypropyl methacrylate ester-styrene copolymer | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-10-16 | — | — | US | disclosed |
| US-8088554-B2 | Bottom resist layer composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD (JP) | 2012-01-03 | — | — | US | disclosed |
| US-7923195-B2 | Positive resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-04-12 | — | — | US | disclosed |
| US-7887991-B2 | Positive resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-02-15 | — | — | US | disclosed |
| US-7745104-B2 | Polymer having a hydrocarbon chain backbone and containing units derived from norbornadiene, indene, benzofuran, benzothiophene, acenaphthene, or vinyl pyrene, fluorene, phenanthrene, chrysene, naphthacene, pentacene, or acenaphthene; excellent etching resistance; shorter wavelengths | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-06-29 | — | — | US | disclosed |
| US-20100151382-A1 | Bottom resist layer composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-06-17 | — | — | US | disclosed |
| US-7687228-B2 | Antireflection film composition and patterning process using the same | SHIN ETSU CHEMICAL CO., LTD. (JP) | 2010-03-30 | — | — | US | disclosed |
| US-7655378-B2 | Negative resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-02-02 | — | — | US | disclosed |
| US-7638268-B2 | Rework process for photoresist film | SHIN-ESTU CHEMICAL CO., LTD. (JP) | 2009-12-29 | — | — | US | disclosed |
| US-7629106-B2 | Resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-12-08 | — | — | US | disclosed |
| US-7169541-B2 | Compound, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-01-30 | — | — | US | disclosed |
| US-7163778-B2 | Anti-reflection film material and a substrate having an anti-reflection film and a method for forming a pattern | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-01-16 | — | — | US | disclosed |
| US-20060234158-A1 | Bottom resist layer composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2006-10-19 | — | — | US | disclosed |
| US-20060147836-A1 | Resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2006-07-06 | — | — | US | disclosed |
| US-20050014092-A1 | Novel compound, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2005-01-20 | — | — | US | disclosed |
| US-20040241577-A1 | Resist lower layer film material and method for forming a pattern | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-12-02 | — | — | US | disclosed |
| US-20040191479-A1 | Anti-reflection film material and a substrate having an anti-reflection film and a method for forming a pattern | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-09-30 | — | — | US | disclosed |
| US-6677101-B2 | REACTIVITY, RIGIDITY AND ADHESION TO THE SUBSTRATE, AND UNDERGOES A LOW DEGREE OF SWELLING DURING DEVELOPMENT; RESOLUTION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-01-13 | — | — | US | disclosed |
| US-20020132182-A1 | Polymers, resist materials, and pattern formation method | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-09-19 | — | — | US | disclosed |
| US-6395446-B1 | CONTAINING SULFONYLDIAZOMETHANE COMPOUND AS ACID GENERATOR | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-05-28 | — | — | US | disclosed |