Predicted protein targets (top 18)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | PPARG | P37231 | 7/20 | 0.38 |
| ▸ | PPARA | Q07869 | 7/20 | 0.38 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.38 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.38 |
| ▸ | PPARD | Q03181 | 1/20 | 0.38 |
| ▸ | ENPP1 | P22413 | 2/20 | 0.36 |
| ▸ | RIPK1 | Q13546 | 1/20 | 0.35 |
| ▸ | SLC6A2 | P23975 | 1/20 | 0.32 |
| ▸ | SLC6A4 | P31645 | 1/20 | 0.32 |
| ▸ | SLC6A3 | Q01959 | 1/20 | 0.32 |
| ▸ | HDAC4 | P56524 | 1/20 | 0.32 |
| ▸ | HDAC2 | Q92769 | 1/20 | 0.32 |
| ▸ | HDAC8 | Q9BY41 | 1/20 | 0.32 |
| ▸ | ABL1 | P00519 | 1/20 | 0.32 |
| ▸ | ABCB1 | P08183 | 1/20 | 0.32 |
| ▸ | BCR | P11274 | 1/20 | 0.32 |
| ▸ | KIF11 | P52732 | 1/20 | 0.31 |
| ▸ | GPR174 | Q9BXC1 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL8320148 | 0.90 | PPARA (0.39) | PPARGPPARACYP2C9CYP2C19PPARD | |
| Sulfuric Acid SCHEMBL15345275 | 0.88 | PPARG (0.37) | PPARGPPARACYP2C9CYP2C19PPARD | |
| Trifluoromethanesulfonic Acid SCHEMBL216880 | 0.87 | PPARG (0.36) | PPARGPPARACYP2C9CYP2C19PPARD | |
| SCHEMBL8651634 | 0.83 | PPARG (0.36) | PPARGPPARACYP2C9CYP2C19PPARD | |
| SCHEMBL219087 | 0.83 | TDP1 (0.36) | PPARGPPARACYP2C9CYP2C19PPARD | |
| SCHEMBL8083698 | 0.83 | PPARG (0.34) | PPARGPPARACYP2C9CYP2C19PPARD | |
| SCHEMBL6267998 | 0.81 | ABL1 (0.50) | ENPP1HDAC4HDAC2HDAC8ABL1 | |
| SCHEMBL244495 | 0.81 | KDM4E (0.40) | KIF11 | |
| Bromide SCHEMBL3130114 | 0.79 | ABL1 (0.49) | ENPP1HDAC4HDAC2HDAC8ABL1 | |
| SCHEMBL8322047 | 0.78 | ELANE (0.54) | PPARGPPARACYP2C9CYP2C19PPARD |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 649 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-4607278-A1 | CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT | Ycchem Co., Ltd. (KR) | 2025-08-27 | — | — | EP | claimed |
| US-20250199405-A1 | CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT | YCCHEM CO., LTD. (KR) | 2025-06-19 | — | — | US | claimed |
| WO-2024085293-A1 | CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT | 영창케미칼 주식회사 | 2024-04-25 | — | — | WO | claimed |
| US-9075306-B2 | Chemically amplified negative resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-07-07 | — | — | US | claimed |
| EP-1710230-B1 | Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process | SHINETSU CHEMICAL CO (JP) | 2013-08-14 | — | — | EP | claimed |
| EP-1780199-B1 | Novel fluorohydroxyalkyl sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process | SHINETSU CHEMICAL CO (JP) | 2012-02-01 | — | — | EP | claimed |
| EP-1780198-B1 | Novel fluorosulfonyloxyalkyl sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process | SHINETSU CHEMICAL CO (JP) | 2011-10-05 | — | — | EP | claimed |
| US-6440634-B1 | MICROFABRICATION OF INTEGRATED CIRCUITS, DEEP UV LITHOGRAPHY; PHENYLSULFONATE SALTS OF SULFONIUM OR IODINIUM CATIONS | SHIN-ETSU CHEMICAL CO., LTD (JP) | 2002-08-27 | — | — | US | claimed |
| EP-3822278-B1 | ELECTRON-ACCEPTING COMPOUND, COMPOSITION FOR CHARGE TRANSPORT FILM, AND LIGHT-EMITTING ELEMENT USING SAME | MITSUBISHI CHEM CORP (JP) | 2026-05-06 | — | — | EP | disclosed |
| US-20260093177-A1 | PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-04-02 | — | — | US | disclosed |
| US-12535737-B2 | Material for forming adhesive film, patterning process, and method for forming adhesive film | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-01-27 | — | — | US | disclosed |
| US-12493244-B2 | Photosensitive resin composition, photosensitive dry film, and pattern formation method | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-12-09 | — | — | US | disclosed |
| EP-4202548-B1 | MATERIAL FOR FORMING ADHESIVE FILM, PATTERNING PROCESS, AND METHOD FOR FORMING ADHESIVE FILM | SHINETSU CHEMICAL CO (JP) | 2025-11-19 | — | — | EP | disclosed |
| EP-4607278-A1 | CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT | Ycchem Co., Ltd. (KR) | 2025-08-27 | — | — | EP | disclosed |
| US-20010031421-A1 | Chemical amplification resist compositions | SHIN-ETSU CHEMICAL CO., LTD. OF (JP) | 2001-10-18 | — | — | US | disclosed |
| EP-1136885-A1 | Chemically amplified positive resist composition and patterning method | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-09-26 | — | — | EP | disclosed |
| EP-1117003-A1 | Chemical amplification type resist composition | Shin-Etsu Chemical Co., Ltd. (JP) | 2001-07-18 | — | — | EP | disclosed |
| EP-1099983-A1 | Chemically amplified positive resist composition and patterning method | Shin-Etsu Chemical Co., Ltd. (JP) | 2001-05-16 | — | — | EP | disclosed |
| EP-1077391-A1 | Onium salts, photoacid generators for resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-02-21 | — | — | EP | disclosed |
| US-5880169-A | HAVING HIGH RESOLUTION FOR FINE PATTERNING | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1999-03-09 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20260093177-A1 | PATTERNING PROCESS | ARFGAP1, ARF1, ARF4 | PPARG 3071/4885PPARA 3126/4885CYP2C9 2536/4885 |
| US-12535737-B2 | Material for forming adhesive film, patterning process, and method for forming adhesive film | RAD51, CDH1, SMC2 | PPARG 4585/4885PPARA 4540/4885CYP2C9 4016/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.