SCHEMBL21755780

SCHEMBL21755780

Oc1ccc2c3c(ccc2c1)Oc1ccc2cc(O)ccc2c1C3c1cc(I)cc(I)c1O

nearest known ligand 0.36

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
SIRT2 Q8IXJ6 3/20 0.36
HNF4A P41235 1/20 0.33
MEN1 O00255 3/20 0.33
KMT2A Q03164 3/20 0.33
ALDH1A1 P00352 1/20 0.33
FGB P02675 1/20 0.33
HPGD P15428 1/20 0.33
TNNI3 P19429 1/20 0.33
TNNT2 P45379 1/20 0.33
RECQL P46063 1/20 0.33
TNNC1 P63316 1/20 0.33
TTR P02766 1/20 0.33
LMNA P02545 1/20 0.32
APP P05067 1/20 0.31
PDE4D Q08499 1/20 0.31
PRNP P04156 1/20 0.30
RXFP1 Q9HBX9 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL22167520 0.83 SIRT2 (0.34) SIRT2HNF4AMEN1KMT2AALDH1A1
SCHEMBL21755766 0.83 SIRT2 (0.38) SIRT2HNF4AMEN1KMT2AALDH1A1
SCHEMBL21755762 0.81 MEN1 (0.35) MEN1KMT2AALDH1A1FGBHPGD
SCHEMBL19842308 0.79 SIRT2 (0.44) SIRT2HNF4AMEN1KMT2AALDH1A1
SCHEMBL15998767 0.76 MEN1 (0.43) SIRT2HNF4AMEN1KMT2AALDH1A1
SCHEMBL15998726 0.76 MEN1 (0.41) SIRT2HNF4AMEN1KMT2AALDH1A1
SCHEMBL23587442 0.76 CA2 (0.33) MEN1KMT2AALDH1A1FGBHPGD
SCHEMBL18613114 0.75 SIRT2 (0.47) SIRT2MEN1KMT2AALDH1A1FGB
SCHEMBL18614335 0.75 SIRT2 (0.38) SIRT2MEN1KMT2AALDH1A1HPGD
SCHEMBL17370913 0.75 MEN1 (0.42) SIRT2HNF4AMEN1KMT2AALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-3842491-A1 COMPOUND, COMPOSITION CONTAINING THE SAME, METHOD FOR FORMING RESIST PATTERN, AND METHOD FOR FORMING INSULATING FILM MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2021-06-30 EP disclosed
WO-2020040162-A1 COMPOUND, COMPOSITION CONTAINING SAME, METHOD FOR FORMING RESIST PATTERN, AND METHOD FOR FORMING INSULATING FILM 三菱瓦斯化学株式会社 2020-02-27 WO disclosed