Known targets — ChEMBL curated mechanism
ABL1BMXBRAFBTKCHRNA4CHRNB2CSNK1EEGFRERBB2F10FLT1FLT3FLT4IGF1RINSRITKJAK3KDRKITOPRM1PARP1PARP2PDGFRBPIK3CDRAF1RETSLC18A2TECTXKdacAdacBdacCftsImrcAmrcBmrdArplArplBrplCrplDrplErplFrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmFrpmGrpmHrpmIrpmJrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUykgMykgO
The experimentally established mechanism targets of Succinimide. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | MAPT | P10636 | 2/20 | 0.50 |
| ▸ | RECQL | P46063 | 1/20 | 0.50 |
| ▸ | CRBN | Q96SW2 | 2/20 | 0.48 |
| ▸ | PKM | P14618 | 5/20 | 0.47 |
| ▸ | ALDH1A1 | P00352 | 4/20 | 0.45 |
| ▸ | LMNA | P02545 | 2/20 | 0.45 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.45 |
| ▸ | HTT | P42858 | 2/20 | 0.45 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.45 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.45 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.45 |
| ▸ | CYP2D6 | P10635 | 2/20 | 0.44 |
| ▸ | GAA | P10253 | 1/20 | 0.43 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.43 |
| ▸ | SNCA | P37840 | 1/20 | 0.42 |
| ▸ | CA1 | P00915 | 2/20 | 0.41 |
| ▸ | CA2 | P00918 | 2/20 | 0.41 |
| ▸ | MMP2 | P08253 | 2/20 | 0.41 |
| ▸ | MMP1 | P03956 | 1/20 | 0.41 |
| ▸ | MMP9 | P14780 | 1/20 | 0.41 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Succinimide SCHEMBL3224337 | 0.86 | CRBN (0.46) | MAPTRECQLCRBNPKMALDH1A1 | |
| SCHEMBL10972513 | 0.85 | MAPT (0.50) | MAPTRECQLCRBNPKMALDH1A1 | |
| SCHEMBL30197568 | 0.82 | ALDH1A1 (0.49) | MAPTRECQLPKMALDH1A1LMNA | |
| Barbituric Acid SCHEMBL31579289 | 0.82 | MAPT (0.44) | MAPTRECQLCRBNPKMALDH1A1 | |
| SCHEMBL1705904 | 0.82 | GAA (0.62) | MAPTPKMALDH1A1LMNASMN1; SMN2 | |
| SCHEMBL34 | 0.82 | GAA (0.62) | MAPTPKMALDH1A1LMNASMN1; SMN2 | |
| SCHEMBL5068661 | 0.82 | GAA (0.62) | MAPTPKMALDH1A1LMNASMN1; SMN2 | |
| SCHEMBL31313 | 0.82 | GAA (0.62) | MAPTPKMALDH1A1LMNASMN1; SMN2 | |
| SCHEMBL11432043 | 0.82 | GAA (0.62) | MAPTPKMALDH1A1LMNASMN1; SMN2 | |
| P-Xylene SCHEMBL8660591 | 0.82 | GAA (0.62) | MAPTPKMALDH1A1LMNASMN1; SMN2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 57 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-117964526-A | Synthesis and application of (4-benzyl (p-toluenesulfonyl) amino) benzenesulfonamide compound | 赣南医学院 | 2024-05-03 | — | — | CN | claimed |
| CN-117964526-A | Synthesis and application of (4-benzyl (p-toluenesulfonyl) amino) benzenesulfonamide compound | 赣南医学院 | 2024-05-03 | — | — | CN | disclosed |
| EP-1788436-B1 | Rework process for photoresist film | SHINETSU CHEMICAL CO (JP) | 2013-01-09 | — | — | EP | disclosed |
| EP-1813985-B1 | Antireflection film composition, substrate, and pattering process | SHINETSU CHEMICAL CO (JP) | 2012-10-31 | — | — | EP | disclosed |
| US-8288072-B2 | Antireflection film; fast etching speed whcih reduces deformation; accuracy; 2,3-epoxypropyl methacrylate ester-styrene copolymer | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-10-16 | — | — | US | disclosed |
| US-8088554-B2 | Bottom resist layer composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD (JP) | 2012-01-03 | — | — | US | disclosed |
| US-7868407-B2 | Substrate comprising a lower silicone resin film and an upper silicone resin film | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-01-11 | — | — | US | disclosed |
| US-7745104-B2 | Polymer having a hydrocarbon chain backbone and containing units derived from norbornadiene, indene, benzofuran, benzothiophene, acenaphthene, or vinyl pyrene, fluorene, phenanthrene, chrysene, naphthacene, pentacene, or acenaphthene; excellent etching resistance; shorter wavelengths | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-06-29 | — | — | US | disclosed |
| US-20100151382-A1 | Bottom resist layer composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-06-17 | — | — | US | disclosed |
| EP-1720063-B1 | Resin containing ketene-aldehyde copolymer | NIPPON SODA CO (JP) | 2010-04-07 | — | — | EP | disclosed |
| US-20060147836-A1 | Resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2006-07-06 | — | — | US | disclosed |
| US-20050130057-A1 | Acid-degradable resin compositions containing ketene-aldehyde copolymer | NIPPON SODA CO., LTD. (JP) | 2005-06-16 | — | — | US | disclosed |
| US-20050079446-A1 | Novel polymerizable compound, polymer, positive-resist composition, and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2005-04-14 | — | — | US | disclosed |
| US-20050079440-A1 | Novel polymer, positive resist composition, and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2005-04-14 | — | — | US | disclosed |
| US-20050014092-A1 | Novel compound, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2005-01-20 | — | — | US | disclosed |
| US-20040259037-A1 | Resist lower layer film material and method for forming a pattern | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-12-23 | — | — | US | disclosed |
| US-20040241577-A1 | Resist lower layer film material and method for forming a pattern | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-12-02 | — | — | US | disclosed |
| EP-1482361-A1 | ACID-DEGRADABLE RESIN COMPOSITIONS CONTAINING KETENE-ALDEHYDE COPOLYMER | NIPPON SODA CO., LTD. (JP) | 2004-12-01 | — | — | EP | disclosed |
| US-6541179-B2 | A chemically amplified, positive resist comprising a sulfonium salt compound as photoacid generator, a base resin containing a monomer having alicyclic structure, and a solvent; heat treatment and exposure | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2003-04-01 | — | — | US | disclosed |
| US-20010033990-A1 | Resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-10-25 | — | — | US | disclosed |