SCHEMBL2180074

SCHEMBL2180074

C[Si](C)(C)c1ccc[nH]1

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1375632 0.77 DAO (0.35)
SCHEMBL31722305 0.75
SCHEMBL31722380 0.75 HDAC8 (0.32)
SCHEMBL5701122 0.75 NR1H2 (0.31)
SCHEMBL7169327 0.74 TAAR1 (0.32)
SCHEMBL19973316 0.74
SCHEMBL4966261 0.72 AURKA (0.37)
SCHEMBL3796424 0.72
SCHEMBL28399974 0.72 DAO (0.32)
SCHEMBL22589131 0.72 MAOA (0.30)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 157 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12588435-B2 Selective inhibition for selective metal deposition TOKYO ELECTRON LIMITED (JP) 2026-03-24 US claimed
US-20250379101-A1 SURFACE PASSIVATION FOR ACHIEVING CONTROLLABLE QUEUE TIME FOR POST-PLANARIZATION PROCESS TOKYO ELECTRON LTD (JP) 2025-12-11 US claimed
US-12435416-B2 Compositions and methods using same for non-conformal deposition of silicon containing films VERSUM MATERIALS US, LLC (US) 2025-10-07 US claimed
US-12421603-B2 Composition for high temperature atomic layer deposition of high quality silicon oxide thin films VERSUM MATERIALS US, LLC (US) 2025-09-23 US claimed
CN-119900018-A Composition for high temperature atomic layer deposition of high quality silicon oxide films 弗萨姆材料美国有限责任公司 2025-04-29 CN claimed
US-20240213093-A1 CATALYST-ENHANCED CHEMICAL VAPOR DEPOSITION TOKYO ELECTRON LIMITED (JP) 2024-06-27 US claimed
WO-2024137050-A1 CATALYST-ENHANCED CHEMICAL VAPOR DEPOSITION TOKYO ELECTRON LIMITED (JP) 2024-06-27 WO claimed
US-20230274932-A1 SELECTIVE INHIBITION FOR SELECTIVE METAL DEPOSITION TOKYO ELECTRON LIMITED (JP) 2023-08-31 US claimed
WO-2023164685-A1 SELECTIVE INHIBITION FOR SELECTIVE METAL DEPOSITION TOKYO ELECTRON LIMITED (JP) 2023-08-31 WO claimed
US-11621190-B2 Method for filling recessed features in semiconductor devices with a low-resistivity metal TOKYO ELECTRON LIMITED (JP) 2023-04-04 US claimed
US-10242864-B2 High temperature atomic layer deposition of silicon oxide thin films VERSUM MATERIALS US, LLC (US) 2019-03-26 US claimed
US-10014213-B2 Selective bottom-up metal feature filling for interconnects TOKYO ELECTRON LIMITED (JP) 2018-07-03 US claimed
US-20180012752-A1 METHOD AND APPARATUS FOR SELECTIVE FILM DEPOSITION USING A CYCLIC TREATMENT TOKYO ELECTRON LIMITED (JP) 2018-01-11 US claimed
US-20170110368-A1 SELECTIVE BOTTOM-UP METAL FEATURE FILLING FOR INTERCONNECTS TOKYO ELECTRON LIMITED (JP) 2017-04-20 US claimed
US-9460912-B2 High temperature atomic layer deposition of silicon oxide thin films AIR PRODUCTS AND CHEMICALS, INC. (US) 2016-10-04 US claimed
US-20130295779-A1 HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF SILICON OXIDE THIN FILMS VERSUM MATERIALS US, LLC 2013-11-07 US claimed
CN-103374708-A High temperature atomic layer deposition of silicon oxide thin films AIR PROD & CHEM 2013-10-30 CN claimed
EP-2650399-A2 High temperature atomic layer deposition of silicon oxide thin films AIR PRODUCTS AND CHEMICALS, INC. (US) 2013-10-16 EP claimed
EP-0029001-B1 ALPHA-PHENOXY-PROPIONYL AZOLES, THEIR PREPARATION, HERBICIDAL AGENTS CONTAINING THEM AND THEIR USE CIBA-GEIGY AG (CH) 1984-03-21 EP claimed
EP-0023286-B1 AZOLYL-ALKENOLS, PROCESS FOR THEIR PREPARATION AND THEIR USE AS FUNGICIDES BAYER AG (DE) 1983-04-13 EP claimed