SCHEMBL21828554

SCHEMBL21828554

CCCCN[SiH](CC)CC

nearest known ligand 0.41

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
TSHR P16473 4/20 0.41
ALDH1A1 P00352 1/20 0.36
CA1 P00915 2/20 0.36
CA2 P00918 2/20 0.36
ADH1B P00325 1/20 0.36
ADH1C P00326 1/20 0.36
ADH1A P07327 1/20 0.36
ADH7 P40394 1/20 0.36
CA12 O43570 1/20 0.36
CA7 P43166 1/20 0.36
CA14 Q9ULX7 1/20 0.36
MMP2 P08253 2/20 0.34
EPHX1 P07099 3/20 0.33
LMNA P02545 1/20 0.33
ALOX15 P16050 1/20 0.32
THRB P10828 1/20 0.32
MMP1 P03956 1/20 0.31
ACHE P22303 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15309823 0.81
SCHEMBL3389390 0.75 TSHR (0.45) TSHRALDH1A1CA1CA2ADH1B
SCHEMBL8860884 0.73
SCHEMBL9636691 0.73 ADH1B (0.43) TSHRALDH1A1CA1CA2ADH1B
SCHEMBL10024711 0.71 TSHR (0.41) TSHRALDH1A1CA1CA2ADH1B
SCHEMBL10878118 0.69 TSHR (0.48) TSHRALDH1A1ADH1BADH1CADH1A
SCHEMBL2273462 0.67
SCHEMBL16396823 0.67 TSHR (0.38) TSHRALDH1A1CA1CA2ADH1B
SCHEMBL2272126 0.67 TSHR (0.32) TSHRLMNA
SCHEMBL30376718 0.65

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240030026-A1 PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, PROCESSING APPARATUS, AND RECORDING MEDIUM Kokusai Electric Corporation (JP) 2024-01-25 US disclosed
CN-117121172-A Method for manufacturing semiconductor device, substrate processing method, substrate processing apparatus, and program 株式会社国际电气 2023-11-24 CN disclosed
WO-2022264430-A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING DEVICE, AND PROGRAM 株式会社KOKUSAI ELECTRIC 2022-12-22 WO disclosed
EP-3844319-A1 COMPOSITION FOR HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF HIGH QUALITY SILICON OXIDE THIN FILMS Versum Materials US, LLC (US) 2021-07-07 EP disclosed
WO-2020072768-A1 COMPOSITION FOR HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF HIGH QUALITY SILICON OXIDE THIN FILMS VERSUM MATERIALS US, LLC (US) 2020-04-09 WO disclosed